Photoluminescence and Recombination Mechanisms in Nitride-Based Multiple Quantum Wells

Ya Fen Wu; Jiunn Chyi Lee

doi:10.4028/www.scientific.net/AMM.764-765.1250

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vols. 764-765Photoluminescence and Recombination Mechanisms in...

Photoluminescence and Recombination Mechanisms in Nitride-Based Multiple Quantum Wells

Abstract:

The InGaN/AlGaN multiple-quantum-well heterostructures were fabricated by metal-organic chemical vapor deposition system with different indium and aluminum content during the growth of InGaN well layers and AlGaN barrier layers. Temperature-and incident-power-dependent photoluminescence were carried out to examine the recombination mechanisms in the heterostructures. Both of the localization effect and quantum-confined Stark effect are considered. From the experimental and theoretical analysis, the dependence of optical characteristics on the temperature and incident-power are consistent with the recombination mechanisms involving band-tail states and the screen of quantum-confined Stark effect.

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Periodical:

Applied Mechanics and Materials (Volumes 764-765)

Pages:

1250-1254

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.764-765.1250

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Online since:

May 2015

Authors:

Ya Fen Wu*, Jiunn Chyi Lee

Keywords:

Localization Effect, Multiple Quantum Well, Photoluminescence (PL), Quantum-Confined Stark Effect

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