Resistive Switching Characteristics in Boron Doped Zinc Oxide Films

Abstract:

In this work, metal/oxide/metal capacitors were fabricated and investigated using transparent boron-doped zinc oxide (ZnO:B) films for nonvolatile memory applications. Both top and bottom electrodes are tungsten. The average value of transmittance of ZnO:B films grown on silicon substrates is found to be about 91% in the visible light region. According to the relationship between transmittance and wavelength, the optical band gap of ZnO:B films is determined to be about 3.26 eV. The temperature dependent current-voltage curves show that the current density increases with increasing temperature in low-resistance state (LRS), meanwhile, the current density decreases with increasing temperature in high-resistance state (HRS). From the resistive switching behavior of the W/ZnO:B/W memory devices, the reset voltage which triggers the memory devices from an LRS to an HRS is independent of temperature. On the other hand, the set voltage which triggers the memory devices from an HRS to an LRS is increased with temperature.

• Periodical: Applied Mechanics and Materials (Volumes 764-765)
• Pages: 87-91
• DOI: https://doi.org/10.4028/www.scientific.net/AMM.764-765.87
• Online since: May 2015
• Authors: Fu Chien Chiu*
• Keywords: Boron-Doped Zinc Oxide, Non-Volatile Memory (NVM), Resistive Switching, Transparent

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