Enhancement of Intrinsic Carrier Concentration in the Active Layer of Solar Cell Using Indium Nitride Quantum Dot

M.A. Humayun; M.A. Rashid; F. Malek; S.B. Yaakob; A.Z. Abdullah; M.I. Yusoff; M.I. Misrun; G.N. Shasidharan

doi:10.4028/www.scientific.net/AMM.793.435

Paper Titles

A Robust Fuzzy-PI Pitch Angle Controller for Wind Turbine Systems
p.412

Matlab Simulink Simulation of Respiratory Effort Energy Harvester Using Electromagnetic Generator
p.417

Study of TiO₂ Energy Gap Based Temperature Annealing for High Performance Solar Cells
p.425

Efficient Power Generation for Smart Homes Based Titanium Dioxide (TiO₂)
p.430

Enhancement of Intrinsic Carrier Concentration in the Active Layer of Solar Cell Using Indium Nitride Quantum Dot
p.435

Effect of Sintering Atmosphere on the Electrical and Thermal Properties of Al-Doped ZnO Thin Films Prepared Using Inkjet Printing Method
p.440

Forced Convective Heat Transfer of Ionic Wind on Different Surface Conditions
p.445

Characteristics of Dye-Sensitized Solar Cells Using Dye from Pitaya Fruit
p.450

Clustering Technique for DG Planning Considering Load Models
p.457

HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vol. 793Enhancement of Intrinsic Carrier Concentration in...

Enhancement of Intrinsic Carrier Concentration in the Active Layer of Solar Cell Using Indium Nitride Quantum Dot

Abstract:

This paper presents the improvement of intrinsic carrier concentrations in the active layer of solar cell structure using Indium Nitride quantum dot as the active layer material. We have analyzed effective density of states in conduction band and valance band of the solar cell numerically using Si, Ge and InN quantum dot in the active layer of the solar cell structure in order to improve the intrinsic carrier concentration within the active layer of the solar cell. Then obtained numerical results were compared. From the comparison results it has been revealed that the application of InN quantum dot in the active layer of the device structure improves the effective density of states both in conduction band and in the valance band. Consiquently the intrinsic carrier concentration has been improved significently by using InN quantum dot in the solart cell structure.

You might also be interested in these eBooks

Electrical Power Engineering and Sustainable Development of Industry

View Preview

Info:

Periodical:

Applied Mechanics and Materials (Volume 793)

Pages:

435-439

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.793.435

Citation:

Cite this paper

Online since:

September 2015

Authors:

M.A. Humayun*, M.A. Rashid, F. Malek, S.B. Yaakob, A.Z. Abdullah, M.I. Yusoff, M.I. Misrun, G.N. Shasidharan

Keywords:

Carrier Concentration, Density of State, Quantum Dot, Solar Cell

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

* - Corresponding Author

References

[1] V. Devabhaktuni, M. Alam, S. S. R. Depuru, R. C. Green II, D. Nims, and C. Near: Renewable and Sustainable Energy Reviews. Vol. 19 (2013), pp.555-564.

DOI: 10.1016/j.rser.2012.11.024

Google Scholar

[2] M. A. Rashid, A. Yusuf, M. A. Humayun, A. K. N. M. Al-Khateeb and S. Tamaki: American Journal of Applied Sciences, Vol. 10 (2013), pp.1345-1350.

Google Scholar

[3] A. M. Omer: Renewable and sustainable energy reviews, Vol. 12(9), (2008), pp.2265-2300.

Google Scholar

[4] A. Mahrane, M. Chikh, and A. Chikouche: Jordan Journal of Mechanical and Industrial Engineering, Vol. 4(1) (2010), pp.117-120.

Google Scholar

[5] N. Lior: Energy, Vol. 33(6) (2008), pp.842-857.

Google Scholar

[6] M. M. Hossain, M. A. Humayun, M. T. Hasan, A. G. Bhuiyan, A. Hashimoto and A. Yamamoto: IEICE transactions on electronics vol. 95(2) (2012), pp.255-261.

Google Scholar

[7] H. El Ghazi and A. Jorio: Communications in Theoretical Physics, 61(2) (2014), pp.253-256.

Google Scholar

[8] H. Tanaka, N, Morioka, S. Mori, J. Suda, and T. Kimoto: Journal of Applied Physics, vol. 115(5) (2014), p.053713.

Google Scholar

[9] S. Valdueza-Felip, A. Mukhtarova, L. Grenet, C. Bougerol, C. Durand, J. Eymery, and E. Monroy: Applied Physics Express, Vol. 7(3) (2014), p.032301.

DOI: 10.7567/apex.7.032301

Google Scholar

[10] A. J. Nozik, M. C. Beard, J. M. Luther, M. Law, R. J. Ellingson, and J. C. Johnson: Chemical reviews, vol. 110 (11), pp.6873-6890.

Google Scholar

[11] R.B. Laghumavarapu, M. El-Emawy, N. Nuntawong, A. Moscho, L. F. Lester and D. L. Huffaker: Applied Physics Letters, Vol. 91(24) (2007), pp.243115-243115.

DOI: 10.1063/1.2816904

Google Scholar

[12] S. M. Sze, and , K. K. Ng: Physics of semiconductor devices. (John Wiley & Sons, 2006).

Google Scholar