Design of Ultra Low Temperature Pressure and Temperature Sensor Structure

Chang Hong Ji; Bin Zhen Zhang; Jian Zhang; Xiang Hong Li; Jian Lin Liu

doi:10.4028/www.scientific.net/AMM.80-81.693

Paper Titles

Study on the Methods of the Surface Self-Nanocrystalline Technology and its Effect on the Materials Properties
p.673

Equilibrium and Thermodynamic Studies on Biosorption of Dye from Aqueous Solution by PeniciIlium sp.
p.678

The Relationship between Nanocrystalline Structure and Frictional Properties of Nanodiamond/Ni Composite Coatings by Brush Plating
p.683

Film Thickness-Dependent Microstructures and Dielectric Properties of Pb(Zr,Ti)O₃ Thick Films by Sol-Gel Processing
p.688

Design of Ultra Low Temperature Pressure and Temperature Sensor Structure
p.693

The Calibration of the Pressure Sensor at the Ultra-Low Temperature
p.698

Bead-on-Plate Welding on Q235A Steel by Underwater Wet Welding Process with Flux-Cored Wire
p.704

Control System of Diesel Particulate Filter Regeneration Equipment Based on LPG
p.709

The Analysis of Automotive Door Seal Energy Consumption
p.714

HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vols. 80-81Design of Ultra Low Temperature Pressure and...

Design of Ultra Low Temperature Pressure and Temperature Sensor Structure

Abstract:

In order to measure the pressure in the ultra-low temperature condition, the structure of ultra-low temperature piezoresistive pressure sensor is designed. Polysilicon nanometer thin film is used as a varistor according to its temperature and piezoresistive characteristics. The effect of the dimensions of silicon elastic membrane for the sensor sensitivity and the strain dimensions of the elastic membrane are analyzed, then layout position of resistances is arranged. The package structure of pressure sensor is designed. Meanwhile, a low-temperature sensor is designed to compensate the temperature influence to the pressure sensor.

You might also be interested in these eBooks

View Preview

Info:

Periodical:

Applied Mechanics and Materials (Volumes 80-81)

Pages:

693-697

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.80-81.693

Citation:

Cite this paper

Online since:

July 2011

Authors:

Chang Hong Ji, Bin Zhen Zhang, Jian Zhang, Xiang Hong Li, Jian Lin Liu

Keywords:

Polysilicon Nanometer Thin Films, Pressure Sensor, Temperature Sensor

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] Jian Wang, Rongyan Chuai, Xiaoyu He, etc. Polysilicon Nano-film Piezoresistive Pressure Sensor. [J]. Instrument Technique and Sensor, 2009, (9), 6-8.

Google Scholar

[2] Xiaolong Sun. Using Finite Element Simulation Calculate Output-voltage of MEMS Piezoresistive Pressure Sensor. [J]. Instrument Technique and Sensor, 2010, (8), 12-14.

Google Scholar

[3] Xianghua Cheng, Yanzhong Li, Hongbo Li. The analysis of the effect on temperattIre characteristic of pressure transducer. [J]. LT Electronics, 2005, 34(1), 63-67.

Google Scholar

[4] Yanhong Zhang, Bingwu Liu, Litian Liu, etc. Design and Fabrication of a Novel Silicon Pressure／{TTP}-241 Temperature Microsensor. [J]. Chinese Journal Of Sensors And Actuators，2006. 19(6), 2376-2379.

Google Scholar

[5] MOSSAD A A. HKAO I. SELLCHI H. Structural and photo1uminescence properties of nanocrystalline silicon films deposited at low temperature by plasma-enhanced Chemical vapor deposition. Applied SuffaceSclence. 2006, 253(3), 1198—1204.

DOI: 10.1016/j.apsusc.2006.01.064

Google Scholar