The Development of Novel High Speed – Low Noise pHEMT Device for Lossless Underwater Optical Communication

Muammar Mohamad Isa; Siok Lan Ong; Chanuri Charin; Norhawati Ahmad; Siti Salwa Mat Isa; Muhammad Mahyiddin Ramli; N. Khalid; N.I.M. Nor; Shahrir Rizal Kasjoo; M. Missous

doi:10.4028/www.scientific.net/AMM.815.384

Paper Titles

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Defect Segmentation of Semiconductor Wafer Image Using k-Means Clustering
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Optimization of L-Band Ring Cavity Brillouin Erbium Fiber Laser
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The Development of Novel High Speed – Low Noise pHEMT Device for Lossless Underwater Optical Communication
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High Speed All-Photonic Flip-Flop Operation at a Single Wavelength
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Nondestructive Fruit Ripeness Detection System and its Spectral Analyses
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Room Access Control System Using Facial Image Recognition
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Leak Detection in Gas Pipeline Using Hilbert-Huang Transform
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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vol. 815The Development of Novel High Speed – Low Noise...

The Development of Novel High Speed – Low Noise pHEMT Device for Lossless Underwater Optical Communication

Abstract:

We report the development of two epilayers namely the baseline highly strained channel and enhanced low gate leakage samples. The Hall data shows that the enhanced epilayer portraying higher sheet carrier concentration, but comparable carrier mobility in the 2-DEG layer, as compared to the baseline sample. The WinGreen simulation also conformed the enhanced epilayer advantages where wider Schottky barrier is observed and subsequently double carrier concentration is simulated in the channel. Both samples show low AuGe/Au Ohmic contact resistivity of approximately 0.16 Ω.mm. A tremendous advantage on 1 μm Schottky gate leakage is also recorded on enhanced epilayer where the leakage is more than seven times lower than that of the baseline sample. The resulted characteristics are much better than the reported submicron device, thus this device has find an important application in high-gain lossless transmission, especially in underwater optical communication system.

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Periodical:

Applied Mechanics and Materials (Volume 815)

Pages:

384-389

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.815.384

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Online since:

November 2015

Authors:

Muammar Mohamad Isa, Siok Lan Ong, Chanuri Charin, Norhawati Ahmad, Siti Salwa Mat Isa, Muhammad Mahyiddin Ramli, N. Khalid, N.I.M. Nor, Shahrir Rizal Kasjoo, M. Missous

Keywords:

High Frequency, High Speed, InAlAs, InGaAs, InP, Lossless, PHEMT, Underwater Optical Communication

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