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Morphological Characteristics of W-Nanowires after Selective Etching
Abstract:
An eutectic NiAl–1.5 at.% W alloy prepared by using directionally solidified (DS)was employed as a source for producing W-nanowires. Several growth rate of 8,15,25/s was respectively used at a temperature gradient of ~240 K/cm in a Bridgman-type directional solidification furnace. A combined stability diagram was applied to predict proper conditions for the selective dissolution of NiAl matrix to get W-wires. Etching in a mixture of HCl:H2O2 released parallel aligned W-nanowires with a wire diameter of ~500 nm. Different morphologies, such as nanobelts, lotus-shaped, conical of W-nanowires are obtained at the different conditions.
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24-27
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August 2014
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© 2014 Trans Tech Publications Ltd. All Rights Reserved
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