The Influence of Li on the Point Defect Structure of ZnO Varistor Ceramics

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Abstract:

In this paper, the dielectric properties of ZnO-Bi2O3 based varistor ceramics doped with Li are investigated by Novocontrol wide band dielectric spectrometer. It is found that Lithium is an amphoteric impurity. If the content of Lithium is very low, It will enters into the interstitials and Lithium interstitial is formed as a donor. While with the increase of Lithium content, Zn is replaced with Li and Lithium substitution for Zinc as a acceptor is formed. If the content of Lithium increases further, Lithium interstitial is formed again with the redundant Lithium. Therefore, the concentrations of intrinsic point defects of Zinc interstitial and oxygen vacancy varies with the content of Lithium, which leads to the increase of Schottky barrier at grainboundary with Lithium.

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Advanced Materials Research (Volumes 1004-1005)

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424-428

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August 2014

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© 2014 Trans Tech Publications Ltd. All Rights Reserved

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[1] T.K. Gupta: J. Am. Ceram. Soc. Vol. 73 (1990), p.1817.

Google Scholar

[2] D.R. Clark: J. Am. Ceram. Soc. Vol. 82 (1999), p.485.

Google Scholar

[3] M Marsuoka: Jpa.J. Appl. Phys. Vol. 10 (1971), p.736.

Google Scholar

[4] WG Morris: J. Am. Ceram. Soc. Vol. 56 (1973), p.360.

Google Scholar

[5] PR Emtage: J. Appl. Phys. Vol. 48 (1977), p.4372.

Google Scholar

[6] K. Mukae, K. Tsuda and I. Nagasawa: J. Appl. Phys. Vol. 50 (1979), p.4475.

Google Scholar

[7] T.T. Raymond: Appl. Phys. Rev. Vol. 1 (2014), p.011304.

Google Scholar

[8] U. Oagur, Y.I. Alivov, C. Liu et al: Appl. Phys. Rev. Vol. 98 (2005), p.041301.

Google Scholar

[9] G. Vincent, D.U. Bois and P. Pinard: J. Appl. Phys. Vol. 46 (1975), p.5173.

Google Scholar

[10] A. Janotti, C.G. Van de Walle: Phys. Rev. B Vol. 76 (2007), p.165202.

Google Scholar

[11] S.B. Zhang, S.H. Wei and A. Zunger: Phys Rev B Vol. 60 (2001), p.075205.

Google Scholar

[12] X.M. Duan, C. Stampf, et al: Phys. Rev. B Vol. 79 (2009), p.235208.

Google Scholar

[13] J.C. Simpson and J.F. Cordaro: J. Appl. Phys. Vol. 63 (1988), p.1781.

Google Scholar

[14] J.F. Cordaro, and Y. Shim: J. Appl. Phys. Vol. 60 (1986), p.4186.

Google Scholar

[15] S.N. Bai and T.Y. Tsenga: J. Appl. Phys. Vol. 74 (1993), p.695.

Google Scholar

[16] P.F. Cheng, S.T. Li, L. Zhang and J.Y. Li: Appl. Phys. Lett. Vol. 93 (2008), p.012902.

Google Scholar

[17] A.K. Sankey and J.D. Dow: Phys. Rev.B. Vol. 28 (1983), p.946.

Google Scholar

[18] G Mandel: Phys. Rev. Vol. 134 (1964), p. A1073.

Google Scholar