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Simulation of the Electrical Properties of Semiconductive BaTiO3 Ceramic Varistors Using Continuum Theory

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Abstract:

A continuum field model describing the electrical characteristics of polycrystalline semiconductors ceramics is suggested. Taking into account the continuum theory, a static differential equation about electron level on the base of Poisson equation is established. The one-dimensional quantitative calculation is carried out using the Runge-Kutta method. The results show that as the applied voltage increases, the grain boundary barrier in the nonlinear zone drop drastically. The nonlinear characteristics of high temperature paraelectric phase is larger than that of room temperature ferroelectric phase.

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Periodical:

Advanced Materials Research (Volumes 1004-1005)

Pages:

420-423

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.1004-1005.420

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Online since:

August 2014

Authors:

Chao Fang*, Liang Yan Chen

Keywords:

Energy Band, Grain Boundary, Nonlinear, Semiconducting Ceramics

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© 2014 Trans Tech Publications Ltd. All Rights Reserved

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