Effect of B4C-Si3N4 on Crystallization and Sintering of Fused Quartz Ceramic Material

Jing Long Bu; Yan Feng He; Shu Bin Shen; Yue Jun Chen; Ying Lei Gu; Zhi Fa Wang

doi:10.4028/www.scientific.net/AMR.1004-1005.401

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 1004-1005Effect of B4C-Si3N4 on Crystallization and...

Effect of B₄C-Si₃N₄ on Crystallization and Sintering of Fused Quartz Ceramic Material

Abstract:

Fused quartz granules (d₅₀=19 μm) were used as raw material, and B₄C-Si₃N₄ (1:1, in mass) was used as additive with dosages of 1% (in mass, similarly hereinafter), 2% and 3%. Fused quartz ceramic materials were fabricated in reduction atmosphere at 1250 °C, 1300 °C, 1350 °C and 1400 °C for 1 h. The apparent porosity, bending strength and thermal expansion ratios of the samples were examined and they were analysed by means of XRD. The results showed that the sample sintered at each temperature with 1% B₄C-Si₃N₄ had the lowest apparent porosity, the highest bending strength. This indicated that 1% B₄C-Si₃N₄ was conducive to sintering of fused quartz ceramic materials. The results of XRD analysis and thermal expansion ratio analysis showed that 1% B₄C-Si₃N₄ compound additive had obvious effect on inhibiting crystallization of the samples sintered at various temperatures. It can be deduced that the 1% B₄C-Si₃N₄ compound additive plays the excellent role in inhibiting crystallization and facilitating sintering of fused quartz ceramic materials.

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Periodical:

Advanced Materials Research (Volumes 1004-1005)

Pages:

401-404

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.1004-1005.401

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Online since:

August 2014

Authors:

Jing Long Bu*, Yan Feng He, Shu Bin Shen, Yue Jun Chen, Ying Lei Gu, Zhi Fa Wang

Keywords:

Boron Carbide, Crystallization, Fused Quartz, Silicon Nitride, Sintering

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