Structural Properties of P-Type ZnO Thin Film Post-Treated by NH3 Plasma Method

Ping Cao; Yue Bai

doi:10.4028/www.scientific.net/AMR.1004-1005.784

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 1004-1005Structural Properties of P-Type ZnO Thin Film...

Structural Properties of P-Type ZnO Thin Film Post-Treated by NH₃ Plasma Method

Abstract:

In this paper, a simple method is reported to obtain nitrogen-doped p-ZnO film. In this method NH₃ plasma, generated in a plasma-enhanced chemical vapor deposition system, was employed to treat ZnO thin film. By hall-effect measurement a p type conductivity was observed for the treated film with the hole density of 3.6×10¹⁶. XPS result confirmed nitrogen was incorporated into ZnO film during the treatment process to occupy the oxygen positions.

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Periodical:

Advanced Materials Research (Volumes 1004-1005)

Pages:

784-787

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.1004-1005.784

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Online since:

August 2014

Authors:

Ping Cao*, Yue Bai

Keywords:

Post-Treated, p-Type, ZNO

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