Quantitative Analysis of the Element Silicon by Laser-Induced Breakdown Spectroscopy

Xiao Xia Zhao; Yu Qin Wang; Wen Feng Luo; Hai Yan Zhu; Yuan Yuan Li

doi:10.4028/www.scientific.net/AMR.1015.27

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 1015Quantitative Analysis of the Element Silicon by...

Quantitative Analysis of the Element Silicon by Laser-Induced Breakdown Spectroscopy

Abstract:

The second harmonic of a pulsed Nd: YAG laser (532 nm) has been used for the ablation of aluminum alloy in air at atmospheric pressure and the laser-induced plasma characteristics are examined in detail. The electron density of 6.7 × 10¹⁷ cm^-3 is inferred from the Stark broadening of the profile of Si (I) 288.16 nm, while the plasma temperature (5982 K) is obtained using the Boltzmann plot method of four neutral aluminum lines. The calibration curve for silicon is established using a set of six samples of standard aluminum alloy, and its limit of detection is 0.0681 wt%. The plasma is verified to be in local thermodynamic equilibrium (LTE) based on the experimental results.

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Periodical:

Advanced Materials Research (Volume 1015)

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27-31

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.1015.27

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Online since:

August 2014

Authors:

Xiao Xia Zhao, Yu Qin Wang, Wen Feng Luo*, Hai Yan Zhu, Yuan Yuan Li

Keywords:

Emission Spectroscopy, LIBS, Plasma

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