An Experimental Study on Single Point Diamond Turning of an Unpolished Silicon Wafer via Micro-Laser Assisted Machining

Abstract:

Single Pointe Diamond Turning (SPDT) of silicon can be an extremely abrasive process due to the hardness of this material. In this research SPDT is coupled with the micro-laser assisted machining (μ-LAM) technique to machine an unpolished single crystal silicon (Si) wafer. Si is increasingly being used for industrial applications as it is hard, strong, inert, light weight and has great optical and electrical properties. Manufacturing this material without causing surface and subsurface damage is extremely challenging due to its high hardness, brittle characteristics and poor machinability. However, ductile regime machining of Si is possible due to the high pressure phase transformation (HPPT) occurring in the material caused by the high compressive and shear stresses induced by the single point diamond tool tip. The μ-LAM system is used to preferentially heat and thermally soften the workpiece material in contact with a diamond cutting tool. Different outputs such as surface roughness (Ra, Rz) and depth of cuts (DoC) for different set of experiments with and without laser were analyzed. Results show that an unpolished surface of a Si wafer can be machined in two passes to get a very good surface finish.

• Periodical: Advanced Materials Research (Volume 1017)
• Pages: 175-180
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.1017.175
• Online since: September 2014
• Authors: Hossein Mohammadi*, H. Bogac Poyraz, Deepak Ravindra, John A. Patten
• Keywords: HPPT, Micro-Laser Assisted Machining, Silicon, SPDT, μ-LAM

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