Material Properties of a New PCD Made of Boron Doped Diamond Particles

William Chen; Manabu Iwai; Shinichi Ninomiya; Kiyoshi Suzuki

doi:10.4028/www.scientific.net/AMR.1017.154

Paper Titles

Investigation of Glass Polishing Motion Based on Micro-Oscillating Pressing Force with a Compact Robot and Fine Diamond Stone
p.129

Development of Non-Destructive Inspection System for Grinding Burn-in-Process Detection of Grinding Burn
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Feature Extraction Based 3D Model Registration for Surface Finish Quality Evaluation
p.141

Dry Sliding Wear Behaviour of Full Pearlite Obtained by Cladding Low Carbon Steel to Hypoeutectoid Steel
p.147

Material Properties of a New PCD Made of Boron Doped Diamond Particles
p.154

Dynamic Friction Polishing of Diamond Utilizing High Reactive Metallic Tools
p.160

Evaluation and ANN-Based Prediction on Functional Parameters of Surface Roughness in Precision Grinding of Cast Iron
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An Experimental Study on Single Point Diamond Turning of an Unpolished Silicon Wafer via Micro-Laser Assisted Machining
p.175

Effect of Cutting Fluid on Diamond Tool Life under Micro V-Groove Turning of Cobalt-Free Tungsten Carbide
p.181

HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 1017Material Properties of a New PCD Made of Boron...

Material Properties of a New PCD Made of Boron Doped Diamond Particles

Abstract:

In order to cope with various problems associated with machining of PCD, development of a new PCD possessing excellent tool properties and good machinability at the same time has been demanded. From this point of view, the authors have developed a new PCD, “EC-PCD (Electrically Conductive PCD)”, composed of boron doped diamond particles in place of the standard non-conductive diamond. In this research, investigation into material properties of the newly developed EC-PCD is made. Through the tests, it was found that the boron doped diamond particles (the source material of the new PCD) had an electrical resistivity of 1.6×10^-4Ω·m and the thermal conductivity after sintering was lower than that of the standard PCD. In addition, it was confirmed that the electrical conductivity of the source diamond particles of the EC-PCD had not been lost even under the condition of high temperature and high pressure during the manufacture. As a result of the heat test, EC-PCD’s high resistance to oxidation at high temperatures was confirmed showing no changes in the surface condition even at 675oC while the surface of the S-PCD was largely changed at the same temperature. One of the reasons for this is guessed to be that EC-PCD is hard to react with the cobalt contained as a catalyst metal. Further, it was found in the friction tests using a steel ball that the friction coefficient of the EC-PCD was 50% higher than that of S-PCD at the room temperature though it dropped by 10-30% at the temperature of 80oC.

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Periodical:

Advanced Materials Research (Volume 1017)

Pages:

154-159

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.1017.154

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Online since:

September 2014

Authors:

William Chen*, Manabu Iwai, Shinichi Ninomiya, Kiyoshi Suzuki

Keywords:

Boron Doped Diamond, Electrically Conductive Diamond, Material Property, PCD

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References

[1] K. Suzuki, A. Sharma, M. Iwai, T. Uematsu, K. Shoda, M. Kunieda: Electrical Discharge Machining Using Electrically Conductive CVD Diamond as an Electrode, New Diamond and Frontier Carbon Technology, Vol. 14, No. 1 (2004) pp.35-44.

DOI: 10.4028/www.scientific.net/kem.257-258.535

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[2] K. Okano, H. Naruki, Y. Akiba, T. Kurosu, M. Iida, Y. Hirose, T. Nakamura: Characterization of Boron-Doped Diamond Film, Japanese Journal of Applied Physics, Vol. 28, No. 6 (1989) pp.1066-1078.

DOI: 10.1143/jjap.28.1066

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