Statistical Analysis on Lapping Parameters for Sapphire Wafer

Hao Wu; Peng Fei Gao; Wei Fang Wang; Dong Hui Wen

doi:10.4028/www.scientific.net/AMR.102-104.587

Paper Titles

Path Generation and Posture Angle Control of Tool for Robotic Polishing System
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The Numerical Simulation of the Single Abrasive Motion Law in the Environment of Structural Surface
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The Manufacturing of Rapid Tooling by Stereo Lithography
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Research and Application of Metal Cold Extrusion Forming Utilising Floating Die and Divided Flow
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Statistical Analysis on Lapping Parameters for Sapphire Wafer
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Study on the Effect of Ultrasonic Surface Rolling Processing Parameters on the Surface Roughness of Q345 Hydraulic Prop
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Research on Hole Expanding with Spiral-Fluted Electrode in ECM
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Tool Wear Image Segmentation Based on Markov Random Field Model
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Layer Face Milling Cutter Parametric Modeling and Modal Analysis
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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 102-104Statistical Analysis on Lapping Parameters for...

Statistical Analysis on Lapping Parameters for Sapphire Wafer

Abstract:

Effect of lapping speed, plate material and crystal orientation on material removal rate and surface roughness were investigated by experiments and Taguchi Methods. Experimental results show both materials remove rate and surface roughness could be finished by using sythetic copper lapping plate with w3.5 cubic boron nitride abrasive than that for thin plate. Materials removal rate and surface roughness have no much difference for different crystal orientation as A-plane, C-plane and M-plane with experimental parameter conditions, lapping speed would be recommonded to not over 40rpm.