Statistical Analysis on Lapping Parameters for Sapphire Wafer

Abstract:

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Effect of lapping speed, plate material and crystal orientation on material removal rate and surface roughness were investigated by experiments and Taguchi Methods. Experimental results show both materials remove rate and surface roughness could be finished by using sythetic copper lapping plate with w3.5 cubic boron nitride abrasive than that for thin plate. Materials removal rate and surface roughness have no much difference for different crystal orientation as A-plane, C-plane and M-plane with experimental parameter conditions, lapping speed would be recommonded to not over 40rpm.

Info:

Periodical:

Advanced Materials Research (Volumes 102-104)

Edited by:

Guozhong Chai, Congda Lu and Donghui Wen

Pages:

587-590

DOI:

10.4028/www.scientific.net/AMR.102-104.587

Citation:

H. Wu et al., "Statistical Analysis on Lapping Parameters for Sapphire Wafer", Advanced Materials Research, Vols. 102-104, pp. 587-590, 2010

Online since:

March 2010

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Price:

$35.00

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