Post-Deposition Annealing in Nitrous Oxide Ambient of RF-Magnetron Sputtered Y₂O₃ Film on Silicon Substrate

Abstract:

In this work, effects of post-deposition annealing (PDA) time (15, 30, and 45 min) in nitrous oxide ambient on Y₂O₃ film deposited on Si substrate using RF-magnetron sputtering have been systematically studied. Y₂O₃/Si system subjected to PDA time at 15 and 30 min has demonstrated a negative flatband voltage shift but a change to positive flatband voltage shift was observed when PDA time was prolonged to 45 min. The shift from negative to positive flatband voltage with enhancement of PDA time could be related to the accumulation of nitrogen in the Y₂O₃ gate that acted as negatively trap charge. It was perceived that sample subjected to PDA time at 30 min has demonstrated the best leakage current density-breakdown voltage (J-V_B) characteristic. A correlation between the J-V_B characteristics with effective oxide charge, slow trap density, interface trap density, and total interface trap density has been discussed.

• Periodical: Advanced Materials Research (Volume 1024)
• Pages: 360-363
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.1024.360
• Online since: August 2014
• Authors: Hock Jin Quah, Kuan Yew Cheong*
• Keywords: Annealing, Nitrous Oxide, Sputter, Y₂O₃

References

[1] J. Robertson, High dielectric constant oxides, Eur. Phys. J. Appl. Phys. 28 (2004) 265-291.

DOI: 10.1051/epjap:2004206

[2] J. H. Kim, V. A. Ignatova, M. Weisheit, Annealing effect on physical and electrical characteristics of thin HfO2, HfSixOy and HfOyNz films on Si, Microelectron. Eng. 86 (2009) 357-360.

DOI: 10.1016/j.mee.2008.11.012

[3] J. Kolodzey, E. A. Chowdhury, T. N. Adam, G. Qui, I. Rau, J. O. Olowolafe, J. S. Suehle, Y. Chen, Electrical conduction and dielectric breakdown in aluminum oxide insulator on silicon, IEEE Trans. Electron Dev. 47 (2000) 121-128.

DOI: 10.1109/16.817577

[4] H. J. Quah, K. Y. Cheong, Z. Hassan, Z. Lockman, F. A. Jasni, W. F. Lim, Effects of postdeposition annealing in argon ambient on metallorganic decomposed CeO2 gate spin coated on silicon, J. Electrochem. Soc. 157 (2010) H6-H12.

DOI: 10.1149/1.3244214

[5] H. J. Quah, K. Y. Cheong, Effects of post-deposition annealing ambient on Y2O3 gate deposited on silicon by RF magnetron sputtering, J. Alloys Compd. 529 (2012) 73-83.

DOI: 10.1016/j.jallcom.2012.02.122

[6] V. H. Mudavakkat, V. V. Atuchin, V. N. Kruchinin, A. Kayani, C. V. Ramana, Structure, morphology and optical properties of nanoscrystalline yttrium oxide (Y2O3) thin films, Opt. Mat. 34 (2012) 893-900.

DOI: 10.1016/j.optmat.2011.11.027

[7] C. V. Ramana, V. H. Mudavakkat, K. K. Bharathi, V. V. Atuchin, L. D. Pokrovsky, V. N. Kruchinin, Enhanced optical constants of nanocrystalline yttrium oxide thin films, Appl. Phys. Lett. 98 (2011) 031905-1-031905-3.

DOI: 10.1063/1.3524202

[8] L. Pei, Z. Jiaqi, Z. Yuankun, J. Chunzhu, Y. Xunbo, Evolution of composition, microstructure and optical properties of yttrium oxide thin films with substrate temperature, Surf. Coat. Technol. 229 (2013) 226-230.

DOI: 10.1016/j.surfcoat.2012.03.074

[9] P. Lei, J. Zhu, Y. Zhu, C. Jiang, X. Yin, Yttrium oxide: thin films prepared under different oxygen-content atmospheres: microstructure and optical properties, Appl. Phys. A 108 (2012) 621-628.

DOI: 10.1007/s00339-012-6940-4

[10] H. J. Quah, K. Y. Cheong, Deposition and post-deposition annealing of thin Y2O3 film on n-type Si in argon ambient, Mater. Chem. Phys. 130 (2011) 1007-1015.

DOI: 10.1016/j.matchemphys.2011.08.024

[11] E. P. Gusev, H. C. Lu, T. Gustafsson, E. Garfunkel, M. L. Green, D. Brasen, The composition of ultrathin silicon oxynitrides thermally grown in nitric oxide, J. Appl. Phys. 82 (1997) 896-898.

DOI: 10.1063/1.365858

[12] W. Kern, The evolution of silicon wafer cleaning technology, J. Electrochem. Soc. 137 (1990) 1887-1892.

DOI: 10.1149/1.2086825

[13] H. J. Quah, K. Y. Cheong, Study on gallium nitride-based metal-oxide-semiconductor capacitors with RF magnetron sputtered Y2O3 gate, IEEE Trans. Electron Dev 59 (2012) 3009-3016.

DOI: 10.1109/ted.2012.2212903

[14] H. J. Quah, K. Y. Cheong, Surface passivation of gallium nitride by ultrathin RF-magnetron sputtered Al2O3 gate, ACS Appl. Mater. Interfaces 5 (2013) 6860-6863.

DOI: 10.1021/am402333t

[15] H. J. Quah, K. Y. Cheong, Effects of post-deposition annealing ambient on chemical, structural, and electrical properties of RF magnetron sputtered Y2O3 gate on gallium nitride, J. Alloy Compd. 575 (2013) 382-392.

DOI: 10.1016/j.jallcom.2013.05.202

[16] H. J. Quah, K. Y. Cheong, Z. Hassan, Z. Lockman, Effects of N2O postdeposition annealing on metal-organic decomposed CeO2 gate spin-coated on GaN substrate, J. Electrochem. Soc. 158 (2011) H423-H432.

DOI: 10.1149/1.3548542