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Effects of Al-Doping on the Thermoelectric Properties of ZnO:Al Thin Films

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Abstract:

Zn1-xAlxO (AZO, x=0, 1.2, 2.1, 2.8 and 3.8 at.%) films were deposited on glass substrates at room-temperature by magnetron sputtering using Zn-Al alloy target. The influence of Al-doping on the thermoelectric properties of AZO films was systematically investigated. It was found that the electrical conductivity at room temperature increased from ~450 S/m (undoped ZnO) to 5.7×104 S/m (Zn0.979Al0.021O). The Seebeck coefficient of Zn0.972Al0.028O and Zn0.979Al0.021O film increased stably with the increase of temperature from room temperature up to 300 °C. The power factor of Zn0.972Al0.028O thin film increased significantly with increasing of temperature and reached a maximum value of 17.9×10-5 Wm-1K-2 at 300 °C, which was about three times larger than that of undoped ZnO films.

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Periodical:

Advanced Materials Research (Volumes 1033-1034)

Pages:

110-113

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.1033-1034.110

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Online since:

October 2014

Authors:

Jing Ting Luo*, Mao Dong Zhu, Di Gu, Liu Yang Wang, Qing Yun Lin, Ying Zhen Li, Zhuang Hao Zheng

Keywords:

Thermoelectric Properties, Zn-Al Alloy Target, ZnO:Al (AZO) Thin Film

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© 2014 Trans Tech Publications Ltd. All Rights Reserved

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