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The Study of GaAsP/GaP Photodiode for Yellow Light Detection

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Abstract:

A novel photodiode was fabricated for detecting the weak emission light of infrared up-conversion material. This GaAsP/GaP photodiode has a PIN structure, with the spectral response range is 500nm to 650nm, and the peak sensitivity wavelength is 555nm. The dark current is below 4nA at a bias of-5V. The response characteristics is 0.12μA/μW at a bias of-5V.

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Periodical:

Advanced Materials Research (Volumes 1033-1034)

Pages:

1120-1122

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.1033-1034.1120

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Cite this paper

Online since:

October 2014

Authors:

Xue Fang Xiao*, Guo Wei Lei, Chao Chen

Keywords:

GaAsP/GaP, Photodiode, Yellow Light

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© 2014 Trans Tech Publications Ltd. All Rights Reserved

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