Ferroelectric and Dielectric Properties of Vanadium-Doped Bismuth Layer Sr2Bi4Ti5O18 Ceramics
Sr2Bi (4-x/3) Ti (5-x) VxO18 (x = 0.0-0.06) (SBTV) ceramics were prepared by a solid-state reaction method, and the ferroelectric and dielectric properties of the ceramics were investigated with respect to the amount of V deficiency. XRD analysis indicated that the oxide compounds were Aurivillius phases. The Curie temperature of SBTV ceramics was improved by doping of certain amount of V. The V deficiency also led to a steady increase in the density together with a decrease in the coercive field. For the ceramics with x = 0.06, the properties become optimum: d33 = 19 pC/N, Tc = 306oC, Ec = 43.7 KV/cm.
Wei Pan and Jianghong Gong
Y. J. Zhang et al., "Ferroelectric and Dielectric Properties of Vanadium-Doped Bismuth Layer Sr2Bi4Ti5O18 Ceramics", Advanced Materials Research, Vols. 105-106, pp. 245-247, 2010