Ferroelectric and Dielectric Properties of Vanadium-Doped Bismuth Layer Sr2Bi4Ti5O18 Ceramics

Abstract:

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Sr2Bi (4-x/3) Ti (5-x) VxO18 (x = 0.0-0.06) (SBTV) ceramics were prepared by a solid-state reaction method, and the ferroelectric and dielectric properties of the ceramics were investigated with respect to the amount of V deficiency. XRD analysis indicated that the oxide compounds were Aurivillius phases. The Curie temperature of SBTV ceramics was improved by doping of certain amount of V. The V deficiency also led to a steady increase in the density together with a decrease in the coercive field. For the ceramics with x = 0.06, the properties become optimum: d33 = 19 pC/N, Tc = 306oC, Ec = 43.7 KV/cm.

Info:

Periodical:

Advanced Materials Research (Volumes 105-106)

Edited by:

Wei Pan and Jianghong Gong

Pages:

245-247

DOI:

10.4028/www.scientific.net/AMR.105-106.245

Citation:

Y. J. Zhang et al., "Ferroelectric and Dielectric Properties of Vanadium-Doped Bismuth Layer Sr2Bi4Ti5O18 Ceramics", Advanced Materials Research, Vols. 105-106, pp. 245-247, 2010

Online since:

April 2010

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Price:

$35.00

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