Preparation of HfO2 Thin Film through Self-Assembled Monolayers on Si Substrate

Yu Qin Zheng; Guo Qiang Tan; Hong Yan Miao; Zhong Liang He; Ao Xia; Hai Yang Bo

doi:10.4028/www.scientific.net/AMR.105-106.255

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 105-106Preparation of HfO2 Thin Film through...

Preparation of HfO₂ Thin Film through Self-Assembled Monolayers on Si Substrate

Abstract:

HfO2 thin film was successfully prepared on the silicon substrate by the Liquid Phase Deposition (LPD) and functionalized organic self-assembled monolayers (SAMs) method. Measurement of contact angle showed that SAMs surface characteristics changed from hydrophobic to hydrophilic after UV irradiation. Photographs of Metallographic Microscope showed that octadecyl trichlorosilane-self- assembled monolayers (OTS-SAMs) had an active effect on the deposition of HfO2 thin film. XRD, SEM and AFM images indicated that the HfO2 thin film with cubic crystal structure was smooth, uniform and dense. Its grain size was between 40-100 nm and the height of thin film varies between 20 and 100 nm.

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Periodical:

Advanced Materials Research (Volumes 105-106)

Pages:

255-258

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.105-106.255

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Online since:

April 2010

Authors:

Yu Qin Zheng, Guo Qiang Tan, Hong Yan Miao, Zhong Liang He, Ao Xia, Hai Yang Bo

Keywords:

HFO₂ Thin Film, Self-Assembled Monolayer (SAM), Silicon Substrate

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