Preparation of HfO2 Thin Film through Self-Assembled Monolayers on Si Substrate

Abstract:

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HfO2 thin film was successfully prepared on the silicon substrate by the Liquid Phase Deposition (LPD) and functionalized organic self-assembled monolayers (SAMs) method. Measurement of contact angle showed that SAMs surface characteristics changed from hydrophobic to hydrophilic after UV irradiation. Photographs of Metallographic Microscope showed that octadecyl trichlorosilane-self- assembled monolayers (OTS-SAMs) had an active effect on the deposition of HfO2 thin film. XRD, SEM and AFM images indicated that the HfO2 thin film with cubic crystal structure was smooth, uniform and dense. Its grain size was between 40-100 nm and the height of thin film varies between 20 and 100 nm.

Info:

Periodical:

Advanced Materials Research (Volumes 105-106)

Edited by:

Wei Pan and Jianghong Gong

Pages:

255-258

DOI:

10.4028/www.scientific.net/AMR.105-106.255

Citation:

Y. Q. Zheng et al., "Preparation of HfO2 Thin Film through Self-Assembled Monolayers on Si Substrate", Advanced Materials Research, Vols. 105-106, pp. 255-258, 2010

Online since:

April 2010

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Price:

$35.00

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