Ferroelectric Properties and Microstructures of Tb4O7-Doped Bi4Ti3O12 Thin Films

Abstract:

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Tb4O7-doped bismuth titanate (BixTbyTi3O12 BTT) thin films were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique, and the microstructures and ferroelectric properties of the films were investigated. Microstructure studies indicate that all of BTT films with well-developed rod-like grains consist of single phase of a bismuth-layered structure without preferred orientation. The experimental results indicate that Tb doping into Bi4Ti3O12 results in a remarkable improvement in ferroelectric properties. The remanent polarization (Pr) and coercive field (Ec) of the BTT film with y=0.6 were 22 μC/cm2 and 85 kV/cm, respectively.

Info:

Periodical:

Advanced Materials Research (Volumes 105-106)

Edited by:

Wei Pan and Jianghong Gong

Pages:

259-262

DOI:

10.4028/www.scientific.net/AMR.105-106.259

Citation:

X.A. Mei et al., "Ferroelectric Properties and Microstructures of Tb4O7-Doped Bi4Ti3O12 Thin Films ", Advanced Materials Research, Vols. 105-106, pp. 259-262, 2010

Online since:

April 2010

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Price:

$35.00

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