Effects of Sintering Temperature on Microstructure and Properties in TiO₂ Varistor Ceramics

Abstract:

The effects of sintering temperature on microstructure, micro-composition, barrier structure and electrical properties of TiO2 varistors ceramics were investigated. The microstructures and chemical compositions of grains in TiO2 ceramics were measured by SEM and EDS. Based on the thermo electronic emission theory, Grain boundaries barrier structure was calculated by analyzing electrical properties of samples. The sample sintered at 1350°C exhibits better microstructure and properties. The grains size of the TiO2 sample sintered at 1350°C is about 15m, and other electrical properties are as follows: solid solubility of donor doping Nb5+ cation solute in TiO2 grains of 1.49mol%, barriers height of 0.28ev, barriers width of 48nm, varistor voltages of 5.25V/mm, non-linear coefficient of 4.2 and relative dielectric constant of 1.1×104.

• Periodical: Advanced Materials Research (Volumes 105-106)
• Pages: 324-328
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.105-106.324
• Online since: April 2010
• Authors: Ji Kang Yan, Guo You Gan, Jing Hong Du, Jia Lin Sun
• Keywords: Ceramic, Grain Boundary Barrier Structure, Solid Solution, Varistor

References

[1] C.P. Li, J.F. Wang, W.B. Su, et al.: Materials Letters. Vol. 57 (2003), p.1400.

[2] F.M. ming Meng: Materials Science and Engineering B. Vol. 117 (2005), p.77.

[3] E. J. Harvey,K. R. Whittle,G. R. Lumpkin, et al.: J. Solid State Chem. Vol. 178 (2005) , pp.800-810.

[4] K. Kapoor, S.V. Ramana Rao, Sheela, et al.: Journal of Nuclear Materials. Vol. 321 (2003) , p.331.

[5] S. Tekeli: Materials and Design. Vol. 28 (2007), p.713.

[6] F. Capel, M.A. Baňares, C. Moure, et al.: Materials Letters. Vol. 38 (1999), p.331.

[7] P.Q. Mantas, J.L. Baptista: J. Euro. Ceram. Soc. Vol. 15 (1995), p.605.

[8] M. Radecka,M. Rekas.:J. Euro. Ceram. Soc. Vol. 22 (2002), p. (2001).

[9] Senda T, Bradt R C: J. Am. Ceram. Soc. Vol. 73(1990) , p.106.

[10] T.J. Zhang, D.X. Zhou, S.P. Gong: J. Inorganic Mater. Vol. 14 (1999), p.21.

[11] H.F. Chen, G.Y. Gan, J.K. Yan, et al.: Semiconductor Technology. Vol. 31 (2006), p.102.

[12] S.X. Feng, B. Li, Q.H. Jin: ACTA PHYSICA SINICA. Vol. 49 (2000), p.1307.

[13] S.L. Yang, J. wu:J. Mater. Res. Vol. 10 (1995), p.345.

[14] W.Y. Wang, D.F. Zhang,T. Xu, et al.: Appl. Phys. A. Vol. 76 (2003), p.71.

[15] W. Zhang, M.T. Wu, F.Y. Liu: J. Funct. Mater. Vol. 25(1994), p.137.