Saturation Effect of Al(NO3)3 Dopant on Residual Voltages of ZnO Based Varistor Ceramics

Abstract:

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The additive of Al(NO3)3 was doped into ZnO varistors in order to reduce their residual voltages. Some of doped Al3+ enter the ZnO grains and infill into the vacancies of Zn2+ ions in the crystal lattice. Then, the resistances of ZnO grains decrease, which finally results in lower residual voltages of varistor samples. However, when most of Zn2+ vacancies inside the ZnO crystal lattice are filled with Al3+, redundant Al3+ ions inside ZnO grains will increase the grains’ resistances contrarily. In this paper, ZnO and Al(NO3)3 binary ceramics sintered at 1300 °C for 2, 4 and 8 hours were studied. The J-E curves of the investigated samples exhibit weak non-linear characteristics which may be due to the formation of grain boundary. Moreover, The resistivity dependence of ZnO ceramics on Al addition behaves as a U-type curve and the lowest resistivity of ZnO ceramics is obtained with doping 0.25mol% Al3+.

Info:

Periodical:

Advanced Materials Research (Volumes 105-106)

Edited by:

Wei Pan and Jianghong Gong

Pages:

310-313

DOI:

10.4028/www.scientific.net/AMR.105-106.310

Citation:

W. C. Long et al., "Saturation Effect of Al(NO3)3 Dopant on Residual Voltages of ZnO Based Varistor Ceramics", Advanced Materials Research, Vols. 105-106, pp. 310-313, 2010

Online since:

April 2010

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Price:

$35.00

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