Saturation Effect of Al(NO3)3 Dopant on Residual Voltages of ZnO Based Varistor Ceramics

Wang Chen Long; Jun Hu; Jin Liang He; Jun Liu; Feng Chao Luo

doi:10.4028/www.scientific.net/AMR.105-106.310

Paper Titles

Preparation and Microwave Absorbing Properties of Cu-Doped Ni-Zn Spinel Ferrites
p.293

SrTiO₃ Functional Ceramics Thin Film Prepared by Self-Assembled Monolayers with PTCS Substrate Functionalization
p.297

Thick Film Metallization of AlN by Reactive Binders
p.301

Synthesis and Identification of a Hyperbranched Polymer of Tris(8-hydroxyquinoline) Aluminum Linked with Ethylene Glycol
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Saturation Effect of Al(NO₃)₃ Dopant on Residual Voltages of ZnO Based Varistor Ceramics
p.310

Synthesis of Pr₆O₁₁ Doped Zinc Varistors by High-Energy Milling
p.314

Influences of Sintering Temperature on Microstructure and Electrical Properties of TiO₂ Varistor Ceramics
p.317

Influences of Donor Additives on Properties of TiO₂-Based Varistor
p.320

Effects of Sintering Temperature on Microstructure and Properties in TiO₂ Varistor Ceramics
p.324

HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 105-106Saturation Effect of Al(NO3)3 Dopant on Residual...

Saturation Effect of Al(NO₃)₃ Dopant on Residual Voltages of ZnO Based Varistor Ceramics

Abstract:

The additive of Al(NO3)3 was doped into ZnO varistors in order to reduce their residual voltages. Some of doped Al3+ enter the ZnO grains and infill into the vacancies of Zn2+ ions in the crystal lattice. Then, the resistances of ZnO grains decrease, which finally results in lower residual voltages of varistor samples. However, when most of Zn2+ vacancies inside the ZnO crystal lattice are filled with Al3+, redundant Al3+ ions inside ZnO grains will increase the grains’ resistances contrarily. In this paper, ZnO and Al(NO3)3 binary ceramics sintered at 1300 °C for 2, 4 and 8 hours were studied. The J-E curves of the investigated samples exhibit weak non-linear characteristics which may be due to the formation of grain boundary. Moreover, The resistivity dependence of ZnO ceramics on Al addition behaves as a U-type curve and the lowest resistivity of ZnO ceramics is obtained with doping 0.25mol% Al3+.