Investigation of the Reaction Time and the Process of Synthesis of GaN Nanopowders by Ammoniating Ga2O3

Xiao Shuang Xue; Fen Wang; Jian Feng Zhu; Hai Bo Yang

doi:10.4028/www.scientific.net/AMR.105-106.376

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 105-106Investigation of the Reaction Time and the Process...

Investigation of the Reaction Time and the Process of Synthesis of GaN Nanopowders by Ammoniating Ga₂O₃

Abstract:

GaN nanopowders were synthesized by ammoniating pure Ga2O3 powders at 1000°C for different soaking time. The results show that the growth of GaN at this temperature is based on vapor-solid mechanism. The ammoniating reaction finished and the rearrangement process started when the soaking time is 0.5 h. When the soaking time is 1.5 h, the process of high-temperature aggradation transformed to thermal decomposition-re-crystallization process. Further increasing of soaking time, the fabricated GaN particles with large size aggregated by directional fixed nanorods are substituted by self-governed particles, which agglomerate as honeycomb. Photolumine- scence measurement (PL) test reveals that as prepared sample with 1.5 h possesses the best luminescent property.

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Periodical:

Advanced Materials Research (Volumes 105-106)

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376-379

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.105-106.376

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Online since:

April 2010

Authors:

Xiao Shuang Xue, Fen Wang, Jian Feng Zhu, Hai Bo Yang

Keywords:

Gallium Nitride (GaN), Rearrangement, Recrystallization, Thermal Decomposition

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