Performance Improvement of Hydrogen Peroxide Sensor via Cadmium Doped Nickel Oxide Modifying N-Silicon Electrode

Huai Xiang Li; Chong Yin Shen; Qiong Wu; Wen Sha Xia

doi:10.4028/www.scientific.net/AMR.1052.69

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 1052Performance Improvement of Hydrogen Peroxide...

Performance Improvement of Hydrogen Peroxide Sensor via Cadmium Doped Nickel Oxide Modifying N-Silicon Electrode

Abstract:

Cadmium ion doping was carried out during electrochemically cathodic plating nickel hydroxide on platinum films coated n-silicon (Pt/n-n⁺-Si electrode) in 0.1 M nickel nitrate solution containing 0.035 M cadmium nitrate. The morphology and composition of the products were characterized by scanning electron microscope (SEM) and x-ray photoelectron spectroscopy (XPS), respectively. A two-electrode cell based on Cd-doped NiO/Pt/n-n⁺-Si electrode and a platinum counter has been used for determination of hydrogen peroxide in absence of reference electrode by photocurrent measurement at a zero bias. The emphasis is laid on that the cadmium doping remarkably improves the sensibility of the photoelectrochemical hydrogen peroxide sensor. Under optimizing conditions a sensitivity of 254.6 μA mM^-1 cm^-2 and a linear response range from 0.02 mM up to 0.12 mM with a determination limit of 2.0 μM were achieved in a potassium hydroxide (KOH) solution at pH =13.3.

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Periodical:

Advanced Materials Research (Volume 1052)

Pages:

69-72

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.1052.69

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Online since:

October 2014

Authors:

Huai Xiang Li, Chong Yin Shen, Qiong Wu, Wen Sha Xia

Keywords:

Cadmium Doping, Hydrogen Peroxide, Nickel Oxide (NiO), Silicon Electrode

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