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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 1053The International Research Progress of GaN-Based...

The International Research Progress of GaN-Based Microwave Electronic Devices

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Abstract:

The international research progress of GaN-based high frequency, high power microwave electronic device is introduced. The latest developments in high efficiency and millimeter wave devices are especially described.

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Periodical:

Advanced Materials Research (Volume 1053)

Pages:

69-73

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.1053.69

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Online since:

October 2014

Authors:

Li Wang*, Chun Feng

Keywords:

GaN, HEMT, Microwave Device, Millimeter Wave, Progress

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© 2014 Trans Tech Publications Ltd. All Rights Reserved

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* - Corresponding Author

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