Resistive Switching Behavior in Pt/La0.7Sr0.3MnO3/Nb0.05Bi0.95FeO3/Nb:SrTiO3 Ferroelectric Heterostructure

Yong Dan Zhu; Cheng Hu; An You Zuo

doi:10.4028/www.scientific.net/AMR.1061-1062.333

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 1061-1062Resistive Switching Behavior in...

Resistive Switching Behavior in Pt/La_0.7Sr_0.3MnO₃/Nb_0.05Bi_0.95FeO₃/Nb:SrTiO₃ Ferroelectric Heterostructure

Abstract:

we report reproducible resistive switching performance and relevant physical mechanism of Pt/La_0.7Sr_0.3MnO₃/Nb_0.05Bi_0.95FeO₃/Nb:SrTiO₃ ferroelectric heterostructure which was fabricated by pulsed laser deposition. This device exhibits a nonvolatile resistive switching with a resistance ratio of up to 60 under 2V/-3V pulse voltages at room temperature. Low voltage readout, reliable resistance switching reproducibility and good time retention, indicating promise for non-destructive readout nonvolatile memories. In this metal/p-semiconductor/ferroelectric/n-semiconductor heterostructure, the mechanism of resistive switching behavior would be attributed to the ferroelectric polarization enhanced field-induced charge redistribution at the semiconductor/ferroelectric interface, resulting in the modulation of the interface barrier height. Keywords: Resistive switching, Ferroelectric resistive switching, Ferroelectric field effect.

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Advanced Materials Research (Volumes 1061-1062)

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333-336

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https://doi.org/10.4028/www.scientific.net/AMR.1061-1062.333

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Online since:

December 2014

Authors:

Yong Dan Zhu, Cheng Hu*, An You Zuo

Keywords:

Ferroelectric Field Effect, Ferroelectric Resistive Switching, Resistive Switching

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