Failure Analysis and Precaution of NPN Transistors G3G33A

Article Preview

Abstract:

Failure analysis (FA) is a critical element in the development of engineering processes and products. FA of components is the process of identifying failure mode/mechanism and finding out the causes of failure that relies on using of different testing techniques and analysis methods. It provides information necessary for technology advancement and for corrective action to improve quality and reliability. IC’s for military and space applications have extremely stringent reliability requirements. In this paper, the role of FA was discussed. And common and new techniques and tools were reviewed. Then the failure analysis of NPN transistors G3GGA was completed. Conclusions and recommendations for the analysis of failure sample and additional sample within the same batch are drawn from the discussions. This paper might serve as a reference to laboratories when encountering such problems.

You might also be interested in these eBooks

Info:

Periodical:

Pages:

441-448

Citation:

Online since:

December 2014

Export:

Price:

Permissions CCC:

Permissions PLS:

Сopyright:

© 2015 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

[1] S. I. Nishida, Failure analysis in engineering applications: Butterworth-Heinemann, (1992).

Google Scholar

[2] T. Gaitonde, S. J. Wen, R. Wong, and M. Warriner, Component failure analysis using Neutron beam test, pp.1-5, (2010).

DOI: 10.1109/ipfa.2010.5531992

Google Scholar

[3] W. Liu, J. J. Liou, Y. Jiang, N. Singh, G. Q. Lo, J. Chung, and Y. H. Jeong, Failure Analysis of Si Nanowire Field-Effect Transistors Subject to Electrostatic Discharge Stresses, Electron Device Letters, IEEE, vol. 31, pp.915-917, (2010).

DOI: 10.1109/led.2010.2052911

Google Scholar

[4] H. Chan, Overview of the Failure Analysis Process for Electrical Components, (2009).

Google Scholar

[5] H. P. Feuerbaum, Electron beam testing: methods and applications, Scanning, vol. 5, pp.14-24, (2011).

Google Scholar

[6] J. B. Willis, Analysis of biological materials by atomic absorption spectroscopy, " Methods of Biochemical Analysis, vol. 11, pp.1-67, (2006).

Google Scholar

[7] Semiconductor Reliability Handbook, Renesas, (2008).

Google Scholar

[8] C. Bouvet, P. Fouillat, J.P. Dom, and Y. Danto, Asics failure analysis using two complementary techniques: External electrical testing and internal contactless laser beam testing, Quality And Reliability Engineering International, vol. 8, no. 3, pp.213-217, (1992).

DOI: 10.1002/qre.4680080308

Google Scholar

[9] B. Balogh, R. Kovacs and J. Majsai, Applications and Comparison of Failure Analysis Methods, pp.14-19, (2006).

Google Scholar

[10] L. C. Wagner, Failure analysis challenges, pp.36-41, (2001).

Google Scholar

[11] J. M. Soden and R. E. Anderson, IC failure analysis: techniques and tools for quality reliability improvement, Proceedings of the IEEE, vol. 81, pp.703-715, (1993).

DOI: 10.1109/5.220902

Google Scholar

[12] E. A. Amerasekera and F. N. Najm, Failure mechanisms in semiconductor devices, vol. 8, (1997).

Google Scholar

[13] C. M. Vicroy and J. H. Linn, Analysis of PIND Test Failures, pp.171-179, (1990).

Google Scholar

[14] K. Nikawa, Failure analysis in Si device chips, IEICE transactions on electronics, vol. 77, pp.528-534, (1994).

Google Scholar

[15] J. Woodtli and R. Kieselbach, Damage due to hydrogen embrittlement and stress corrosion cracking, Engineering Failure Analysis, vol. 7, pp.427-450, (2000).

DOI: 10.1016/s1350-6307(99)00033-3

Google Scholar