Out-of-Plane Thermal Conductivity of Silicon Thin Film Doped with Germanium

Abstract:

The out-of-plane thermal conductivity of silicon thin film doped with germanium is calculated by non-equilibrium molecular dynamics simulation using the Stillinger-Weber potential model. The silicon thin film is doped with germanium atoms in a random doping pattern with a doping density of 5% and 50% respectively. The effect of silicon thin film thickness on its thermal conductivity is investigated. The simulated thicknesses of silicon thin film doped with germanium range from 2.2 to 10.9 nm at an average temperature 300K. The simulation results indicate that the out-of-plane thermal conductivity of the silicon thin film doped with germanium decreases linearly with the decreasing film thickness. As for the film thickness of 9.8nm and the average temperature ranging from 250 to 1000 K, the investigation shows that the temperature dependence of the film thermal conductivity is not sensitive.

• Periodical: Advanced Materials Research (Volume 1082)
• Pages: 459-462
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.1082.459
• Online since: December 2014
• Authors: Hui Chen, Wei Yu Chen, Yun Fei Chen*, Ke Dong Bi
• Keywords: Doping, Germanium, Molecular Dynamic (MD), Silicon Thin Film, Thermal Conductivity

References

[1] W.J. Liu and M. Asheghi, Thermal conduction in ultrathin pure and doped single-crystal silicon layers at high temperature, J. Appl. Phys. 98 (2005) 123523.

DOI: 10.1063/1.2149497

[2] A.I. Fedorchenko, A.B. Wang, and H.H. Cheng, Thickness dependence of nanofilm elastic modulus, Appl. Phys. Lett. 94 (2009) 152111.

DOI: 10.1063/1.3120763

[3] A. Mittal and S. Mazumder, Monte carlo study of phonon heat conduction in silicon thin films including contributions of optical phonons, J. Heat Transfer 132 (2010) 052402.

DOI: 10.1115/1.4000447

[4] Y.S. Ju, and K.E. Goodson, Phonon scattering in silicon thin films with thickness of order 100 nm, Appl. Phys. Lett. 74 (1999) 3005–3007.

DOI: 10.1063/1.123994

[5] W.J. Liu and M. Asheghi, Phonon-boundary scattering in ultrathin single-crystal silicon layers, Appl. Phys. Lett. 84 (2004) 3819-3821.

DOI: 10.1063/1.1741039

[6] Z.H. Wang and Z.X. Li, Lattice dynamics analysis of thermal conductivity in silicon nanoscale film, Appl. Therm. Eng. 26 (2006) 2063-(2066).

DOI: 10.1016/j.applthermaleng.2006.04.020

[7] W.J. Liu and M. Asheghi, Thermal conductivity of measurements of ultra-thin single crystal silicon layers, J. Heat Transfer 128 (2006) 75.

DOI: 10.1115/1.2130403

[8] A.I. Boukai, Y. Bunimovich, J. Tahir-Kheli, et al., Silicon nanowires as efficient thermoelectric materials, Nature 451 (2008) 168-171.

DOI: 10.1038/nature06458

[9] J.R. Lukes, D. Y. Li, X. G. Liang, and C. L. Tien, Molecular dynamics study of solid thin-film thermal conductivity, J. Heat Transfer 122 (2000) 536-543.

DOI: 10.1115/1.1288405

[10] J.E. Turney, A.J. H. McGaughey, and C.H. Amon, In-plane phonon transport in thin films, J. Appl. Phys. 107 (2010) 024317.

DOI: 10.1063/1.3296394

[11] C.J. Gomes, M. Madrid, J.V. Goicochea, and C.H. Amon, In-plane and out-of-plane thermal conductivity of silicon thin films predicted by molecular dynamics, J. Heat Transfer 128 (2006) 1114-1121.

DOI: 10.1115/1.2352781

[12] F.H. Stillinger, and T.A. Weber, Computer simulation of local order in condensed phases of silicon, Physical Review B 31 (1985) 5262.

DOI: 10.1103/physrevb.31.5262

[13] A. Majumdar, Microscale heat conduction in dielectric thin films, J. Heat Transfer 115 (1993) 7–16.

DOI: 10.1115/1.2910673