The Nano Tungsten Thin Film and its Contacting Property with Aluminium Electrodes

Wei Liang; Yu Feng Jin; Jin Wen Zhang

doi:10.4028/www.scientific.net/AMR.1082.455

Paper Titles

Shape Parameter Optimization of Inverse Multiquadrics Radial Basis Function for Vibration of Laminated Composite Plates
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Silicon Doped Boron and Glass Based Surface Bonding Strength Analysis via Anodic Bonding Approach
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Failure Analysis and Precaution of NPN Transistors G3G33A
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Effect of the La³⁺-Doping Concentration on the Properties of TiO₂ Thin Films by Sol-Gel Process
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The Nano Tungsten Thin Film and its Contacting Property with Aluminium Electrodes
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Out-of-Plane Thermal Conductivity of Silicon Thin Film Doped with Germanium
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Superhydrophobic Polyimide via UV Photo-Oxidation and Fluoroalkyl Silanization: Changes in Surface Chemistry
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Ambient Temperature Based Thermal Aware Energy Efficient ROM Design on FPGA
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FPGA Based Low Power ROM Design Using Capacitance Scaling
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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 1082The Nano Tungsten Thin Film and its Contacting...

The Nano Tungsten Thin Film and its Contacting Property with Aluminium Electrodes

Abstract:

In this paper we report nanothickness tungsten (W) thin films with nanoscale thickness prepared by DC magnetron sputtering. Three kinds of samples were realized using micromachining technology, including two-wire and four-wire terminal configurations and only Al electrodes. Using four-wire terminal method, we studied on the electrical property of W film and the contacting resistance between W film and Al electrode. The results show that our as-deposited W film is β-W crystal structure and exhibits good resistive property. Al formed a good ohmic contact with W films. Both the resistivity of W film and the contacting resistance declined nearly linearly with the thickness increasing.