A New Test Environment Approach to SEE Detection in MOSFETs

Luis E. Seixas; M.A.G. Silveira; N.H. Medina; V.A.P. Aguiar; N. Added; S.P. Gimenez

doi:10.4028/www.scientific.net/AMR.1083.197

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 1083A New Test Environment Approach to SEE Detection...

A New Test Environment Approach to SEE Detection in MOSFETs

Abstract:

This paper shows a comparison between two different MOSFET structures: a conventional layout (CM) and Diamond (DM - enclosed layout transistor), as tolerance to the Single Event effect - SEE. Both CMOS 0.35μm technology devices types have the same geometric factor (W/L) and during irradiation were monitored continuously to detect and acquire the SEEs applying a new approach with a PXI test system. For this work was used heavy ion beams produced at the São Paulo 8 UD Pelletron accelerator.

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Periodical:

Advanced Materials Research (Volume 1083)

Pages:

197-201

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.1083.197

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Online since:

January 2015

Authors:

Luis E. Seixas*, M.A.G. Silveira, N.H. Medina, V.A.P. Aguiar, N. Added, S.P. Gimenez

Keywords:

Enclosed Layout Transistors (ELT), Heavy Ions, PXI Test System, Radiation Effects, SEE Tolerance

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