Formation and Characterization of PbxCd1-xS Interlayer for PbS/CdS/ZnS Quantum Dots Sensitized Solar Cells

Ai Li Quah; Khatijah Aisha Yaacob

doi:10.4028/www.scientific.net/AMR.1087.316

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 1087Formation and Characterization of PbxCd1-xS...

Formation and Characterization of Pb_xCd_1-xS Interlayer for PbS/CdS/ZnS Quantum Dots Sensitized Solar Cells

Abstract:

Pb_xCd_1-xS quantum dots (QDs) was successfully deposited on TiO₂mesoporous film as TiO₂mesoporous photoanode using successive ionic layer adsorption and reaction (SILAR) method for quantum dot sensitized solar cells (QDSSCs). Quantum dot sensitized solar cells (QDSSCs) were prepared by sandwiching the TiO₂mesoporous photoanode with Cu₂S counter electrode. Single layer of Pb_xCd_1-xS, PbS and CdS and multilayer of PbS/CdS/ZnS as well as multilayer PbS/Pb_xCd_1-xS/CdS/ZnS were prepared for characterizations. The characterizations including X-ray Diffraction Spectroscopy (XRD), Field Emission Scanning Electron Microscopy (FESEM), UV-visible spectrophotometer and Current-density voltage (J-V) measurement were carried out to study the effects of number of SILAR cycles of Pb_xCd_1-xS interlayer for molar fraction, x of 0.2 in QDSSCs. Pb_xCd_1-xS interlayer with four SILAR cycles is incorporated between PbS and CdS layer will increase the efficiency in QDSSCS.

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Advanced Materials Research (Volume 1087)

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316-320

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.1087.316

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Online since:

February 2015

Authors:

Ai Li Quah*, Khatijah Aisha Yaacob

Keywords:

Interlayer, Quantum Dot, SILAR, Solar Cells

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References

[1] J. J. Peterson, and T. D. Krauss, Fluorescence spectroscopy of single lead sulfide quantum dots, Nano. Research Lett. 6 (2006) 510–514.

DOI: 10.1021/nl0525756

Google Scholar

[2] A. Braga, S. Gimenzez, I. Concina, A. Vomiero, and I. Mora-Sero, Panchromatic sensitized solar cells based on metal sulfide quantum dots grown directly on nanostructured TiO2 electrode, J. Phys. Chem. Lett. 2 (2011) 454-460.

DOI: 10.1021/jz2000112

Google Scholar

[3] R. Ahmed, G.Will, J. Bell, and H.Wang, Size-dependent photodegradation of CdS particles deposited onto TiO2 mesoporous films by SILAR method, J. Nano. Research. 14 (2012),1140 1-13.

DOI: 10.1007/s11051-012-1140-x

Google Scholar

[4] J. Kim, H. Choi, C. Nahm, C. Kim, J.I. Kim, W. Lee, S. Kang , B.Lee, T. Hwang, H.H. Park, and B. Park, Graded bandgap structure for PbS/CdS/ZnS quantum dot sensitized solar cells with a PbxCd1-xS interlayer, Appl. Phys. Lett. 102 (2013) 1-4.

DOI: 10.1063/1.4804149

Google Scholar

[5] Q. Shen, J. Kobayashi, L.J. Diguna, and T. Toyoda, Effect of ZnS coating on the photovoltaic properties of CdSe quantum dot sensitized solar cells. J. of Appl. Phys. 103 (2008) 103-107.

DOI: 10.1063/1.2903059

Google Scholar

[6] S. Thangavela, S. Ganesan, S. Chandramohanc, P. Sudhagard, S. K. Yong, and H.H. Chang. Band gap engineering in PbS nanostructured thin films from near-infrared down to visible range by in situ Cd-doping. J. of Al. and Com. 495 (2010) 234-237.

DOI: 10.1016/j.jallcom.2010.01.135

Google Scholar

[7] H. Chen, L. Zhu, W. Li, and H. Liu, Synthesis and photoelectrochemical behavior of CdS quantum dots-sensitized indium-tin-oxide mesoporous ﬁlm. Curr. Appl. Phys. 12 (2012)129-133.

DOI: 10.1016/j.cap.2011.05.018

Google Scholar

[8] R. Xie, U. Kolb, J. Li, T. Basche, and A. Mews. Synthesis and characterization of highly luminescent CdSe-Core CdS/Zn0.5Cd0.5S/ZnS multishell nanocrystals. J. Am. Chem. Soc.127 (2004) 7480-7488.

DOI: 10.1021/ja042939g

Google Scholar