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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 1094Determination of the Interface Roughness between...

Determination of the Interface Roughness between Ni-Coated Layer and Cu Substrate by Glow Discharge Optical Emission Spectroscopy Depth Profiling

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Abstract:

The depth profiles of Ni-coated copper substrates polished by different mesh size sandpapers were measured by the glow discharge optical emission spectroscopy (GDOES) depth profiling technique. The measured depth profiles were well fitted by the MRI-CRAS model developed recently on the basis of the Mixing-Roughness-Information depth (MRI) model and the CRAter-Simulation (CRAS) model, taking into account the pronounced crater effect upon GDOES depth profiling. The crater effect upon depth profiling was characterized quantitatively and the interface roughness values between the coated Ni layer and the Cu substrates were determined and compared with the ones measured by AFM.

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Periodical:

Advanced Materials Research (Volume 1094)

Pages:

181-187

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.1094.181

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Online since:

March 2015

Authors:

Yi Liu, Wei Xuan Lin, Wei Bing Ye, Huan Sheng Li, Jiong Li, Wei Hua Yu, Jiang Yong Wang*

Keywords:

Crater Effect, GDOES Depth Profiling, Interface Roughness, MRI-CRAS Model

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© 2015 Trans Tech Publications Ltd. All Rights Reserved

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[1] M. Yu, R. Wang, H. Ji, R. Huang, X. Zhang, and Y. Wang, et al.: Roughness of amorphous/crystalline interface in pre-amorphization implantation: Molecular dynamic simulation and modeling, Microelectron. Eng. Vol. 81 (2005), p.162.

DOI: 10.1016/j.mee.2005.05.003

[2] M. Ranjbar-Far, J. Absi, G. Mariaux and F. Dubois: Simulation of the effect of material properties and interface roughness on the stress distribution in thermal barrier coatings using finite element method, Mater. Des. Vol. 31 (2010), p.772.

DOI: 10.1016/j.matdes.2009.08.005

[3] Y. Zhang, J. Arfsten, S.A. Pihan, T. Kaule, R. Förch and R. Berger: Interface roughness of plasma deposited polymer layers, J. Colloid Interface Sci. Vol. 351 (2010), p.532.

DOI: 10.1016/j.jcis.2010.07.051

[4] S. Hofmann, in: Auger-and X-ray Photoelectron Spectroscopy in Materials Science, Chap. 7: Quantitative Compositional Depth Profiling, Springer Verlag, Heidel-berg/New York/Dordrecht/London, (2013), p.297.

DOI: 10.1007/978-3-642-27381-0_7

[5] S. Hofmann: Sputter depth profiling: past, present, and future, Surf. Interface Anal. Vol. 46 (2014), p.654.

DOI: 10.1002/sia.5489

[6] C. Lu, A. Wucher and N. Winograd: Investigations of molecular depth profiling with dual beam sputtering, Surf. Interface Anal. Vol. 45 (2013), p.175.

DOI: 10.1002/sia.4838

[7] S. Hofmann: Compositional depth profiling by sputtering, Prog. Surf. Sci. Vol. 36 (1991), p.35.

[8] S. Hofmann, Y. Liu, J.Y. Wang and J. Kovac: Analytical and numerical depth resolution functions in sputter profiling, Appl. Surf. Sci. Vol. 314 (2014), p.942.

DOI: 10.1016/j.apsusc.2014.06.159

[9] Y. Liu, W. Jian, J.Y. Wang and S. Hofmann, J. Kovac: Influence of non-Gaussian roughness on sputter depth profiles, Appl. Surf. Sci. Vol. 276 (2013), p.447.

DOI: 10.1016/j.apsusc.2013.03.114

[10] Y. Yamamoto, N. Yamabe and T. Ohachi: Interface roughness of double buffer layer of GaN film grown on Si(111) substrate using GIXR analysis, J. Cryst. Growth. Vol. 318 (2011), p.474.

DOI: 10.1016/j.jcrysgro.2010.10.053

[11] Y. Fujii: Improvement of X-ray reflectivity calculation on surface and interface roughness, Jpn. J. Appl. Phys. Vol. 53 (2014), p. 05FH06.

DOI: 10.7567/jjap.53.05fh06

[12] K.N. Stoev and K. Sakurai: Review on grazing incidence X-ray spectrometry and reflectometry, Spectrochim. Acta Part B At. Spectrosc. Vol. 54 (1999), p.41.

DOI: 10.1016/s0584-8547(98)00160-8

[13] K. Shimizu, H. Habazaki, P. Skeldon and G.E. Thompson: Radiofrequency GDOES: a powerful technique for depth profiling analysis of thin films, Surf. Interface Anal. Vol. 35 (2003), p.564.

DOI: 10.1002/sia.1572

[14] J. Angeli, A. Bengtson, A. Bogaerts, V. Hoffmann, V.D. Hodoroaba and E. Steers: Glow discharge optical emission spectrometry: moving towards reliable thin film analysis–a short review, J. Anal. At. Spectrom. Vol. 18 (2003), p.670.

DOI: 10.1039/b301293j

[15] R. Escobar Galindo, E. Forniés and J.M. Albella: Compositional depth profiling analysis of thin and ultrathin multilayer coatings by radio-frequency glow discharge optical emission spectroscopy, Surf. Coat. Technol. Vol. 200 (2006), p.6185.

DOI: 10.1016/j.surfcoat.2005.11.064

[16] M.R. Winchester and R. Payling: Radio-frequency glow discharge spectrometry: A critical review, Spectrochim. Acta Part B At. Spectrosc. Vol. 59 (2004), p.607.

DOI: 10.1016/j.sab.2004.02.013

[17] X.Y. Wang, W. Jian, Y. Liu, S.P. Rao, X.X. Zhu and Y.S. Han, et al.: Determination of coated substrate roughness by quantification of measured depth profiles, Adv. Mater. Res. Vol. 602-604 (2012), p.1624.

DOI: 10.4028/www.scientific.net/amr.602-604.1624

[18] G.S. Lau, E.S. Tok, R. Liu, A.T.S. Wee and J. Zhang: Roughening behavior in Si/SiGe heterostructures under O2+ bombardment, Nucl. Instrum. Methods Phys. Res. Sect. B Beam Interact. Mater. At. Vol. 215 (2004), p.76.

DOI: 10.1016/s0168-583x(03)01711-7

[19] S.V. Baryshev, J.A. Klug, A.V. Zinovev, C.E. Tripa, Q. Peng and J.W. Elam, et al.: Measuring the roughness of buried interfaces by sputter depth profiling, Nanotechnology. Vol. 24 (2013), p.015708.

DOI: 10.1088/0957-4484/24/1/015708

[20] H. Nickel, D. Guntur and M. Mazurkiewicz: A. Naoumidis, Contribution to the quantification of glow discharge emission depth profiles for oxide scales on Ni-base alloys, Spectrochim. Acta Part B At. Spectrosc. Vol. 46 (1991), p.125.

DOI: 10.1016/0584-8547(91)80016-v

[21] S. Oswald, V. Hoffmann and G. Ehrlich: Contribution to computer-aided interpretation of ion sputtering depth profiling, Spectrochim. Acta. Vol. 49B (1994), p.1123.

DOI: 10.1016/0584-8547(94)80097-9

[22] Y. Liu, W.H. Yu and J.Y. Wang: A model for quantification of GDOES depth profiles, Vacuum Vol. 113 (2015), p.5.

DOI: 10.1016/j.vacuum.2014.11.015

[23] S. Hofmann and J.Y. Wang: Determination of the depth scale in sputter depth profiling (The sputtered depth in depth profiling), J. Surf. Anal. Vol. 9 (2002), p.306.

DOI: 10.1384/jsa.9.306