The New Study Based on a Dual Ion Implantation PSD Structure

Qian Li; Tian Ze Li; Xiang Peng Chen

doi:10.4028/www.scientific.net/AMR.1096.503

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 1096The New Study Based on a Dual Ion Implantation PSD...

The New Study Based on a Dual Ion Implantation PSD Structure

Abstract:

In the analysis of semiconductor position sensitive detector (PSD) based on the traditional structure, using dual ion implantation method to studying the new type of PSD structure. The new structure of the n-type silicon substrate by implanting a high dose, low energy boron ions and another high energy boron ion, Which subsequent annealing of 2h at 1050 °C in an ambient of dry O₂ to form a shallow and a low doped p-n junction. Experimental results show that the new structure of PSD can obtained high position resolution, smaller errors and nonlinear response time.

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Periodical:

Advanced Materials Research (Volume 1096)

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503-508

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.1096.503

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Online since:

April 2015

Authors:

Qian Li, Tian Ze Li, Xiang Peng Chen

Keywords:

Annealing, Dual Ion Implantation, New Structure of PSD

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