The Influences of Annealing Temperatures on the Properties of HfO2 Thin Film and the Fabrication of SiO2/HfO2 Distributed Bragg Reflector

Wen Cheng Tzou; Hon Kuan; Kai Yang Chuang

doi:10.4028/www.scientific.net/AMR.1101.238

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Surface Treatments of Titanium Alloy for Preparing Laminated Composite Material
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The Impact of Generalized Stacking Fault Energy on the Mechanical Properties of Shuffle Dislocation in Zigzag Single-Walled Carbon Nanotubes
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The Multiband Fractal Antenna on Polymer Substrate Prepared by Using Inkjet Print Technology Based on Silver Nanoparticles
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Novel β- Cyclodextrin Functional Monomers and its Application for Molecularly Imprinted Polymers
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The Influences of Annealing Temperatures on the Properties of HfO₂ Thin Film and the Fabrication of SiO₂/HfO₂ Distributed Bragg Reflector

Abstract:

In this study, HfO₂ thin films were deposited onto the Si substrates by RF magnetron sputtering system. After deposition, the HfO₂ thin films were then heated by a furnace thermal annealing process in air and at 400-700^oC. The surface morphologies and crystalline characteristics of the HfO₂ thin films were investigated by using SEM and XRD patterns. The grain sizes and crystalline phases increased with rising annealing temperature. In addition, the SiO₂/HfO₂ distributed bragg reflector (DBR) was used for improving the external quantum efficiency of the GaN-based LEDs. The output power of LEDs with 9-pair SiO₂/HfO₂ DBR and with Ag mirror+6-pair SiO₂/HfO₂ DBR were increased by approximately 10.6% and 7%, respectively, as compared with the LEDs without SiO₂/HfO₂ DBR.