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Diode Parameters of Mesa Structural n-Type Nanocrystalline FeSi2/p-Type Si Heterojunctions Prepared by Lift-Off Photolithography

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Abstract:

Mesa structural n-type nanocrystalline-FeSi2/p-type Si heterojunctions were successfully fabricated by a lift-off technique combined with a photolithography process. Their current-voltage characteristics were measured at low temperatures range from 300 K down to 60 K. We estimated their diode parameters such as ideality factor, barrier height and series resistance based on the thermionic emission theory and Cheung’s method. From the estimation by the thermionic emission theory, the obtained results show an increase of ideality factor and a decrease of barrier height at low temperatures. The estimation by Cheung’s method shows that the values of ideality factor and barrier height are in agreement with those obtained from the thermionic emission theory. The obtained series resistances from dV/d (lnJ)-J and H(J)-J plots, which are approximately equal to each others, are increased at low temperatures.

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Periodical:

Advanced Materials Research (Volume 1103)

Pages:

91-96

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.1103.91

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Online since:

May 2015

Authors:

Nathaporn Promros*, Suguru Funasaki, Motoki Takahara, Ryūhei Iwasaki, Mahmoud Shaban, Tsuyoshi Yoshitake

Keywords:

Current-Voltage Characteristic, Diode Parameter, Lift-Off Photolithography, Mesa Heterojunction, Nanocrystalline Iron Disilicide

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© 2015 Trans Tech Publications Ltd. All Rights Reserved

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* - Corresponding Author

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