Optimization of Linear Oxide Width Using Local Anodic Oxidation Lithography for Fabrication of Semiconductor and Metal Nanowires

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In this study, the response surface methodology was utilized to optimize width of linear oxide for fabrication of Si oxide nanowires using local anodic oxidation lithography. A collection of experiments was designed using central composite design to evaluate the results statistically. The functional relationships were studied between the ambient humidity, applied voltage and tip speed as independent variables. Furthermore, a new approach was indicated by using design of experiment (DOE) to determine the significant parameters that affects on dimensional characteristics of the linear oxide. Numerical optimization was prepared by the DOE software to obtain the optimal conditions of parameters in order to perform the requirements as desired. These results indicate that the technique has a great potential for the fabrication of individual metal and semiconductor nanowires.

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Periodical:

Edited by:

Mohamad Hafiz Mamat, Tetsuo Soga and Mohamad Rusop Mahmood

Pages:

500-504

DOI:

10.4028/www.scientific.net/AMR.1109.500

Citation:

J. Rouhi et al., "Optimization of Linear Oxide Width Using Local Anodic Oxidation Lithography for Fabrication of Semiconductor and Metal Nanowires", Advanced Materials Research, Vol. 1109, pp. 500-504, 2015

Online since:

June 2015

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$38.00

* - Corresponding Author

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