The Relation of Temperature Distribution on Silicon Wafer with Furnace Temperature and Gas Flow during Thermal Dry Oxidation Process

A.H. Azman; S. Norhafizah; Mat Ayub Ramzan; Mohd Khairuddin Md Arshad; M.F.M. Fathil; M.Z. Kamarudin; M. Nurfaiz; M.A. Farehanim; U. Hashim; M.N. Md Nuzaihan; M. Wesam  Al-Mufti

doi:10.4028/www.scientific.net/AMR.1109.6

Paper Titles

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Synthesis of Co/CNTs Catalyst via Strong Electrostatic Adsorption: Effect of Calcination Condition
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The Relation of Temperature Distribution on Silicon Wafer with Furnace Temperature and Gas Flow during Thermal Dry Oxidation Process
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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 1109The Relation of Temperature Distribution on...

The Relation of Temperature Distribution on Silicon Wafer with Furnace Temperature and Gas Flow during Thermal Dry Oxidation Process

Abstract:

Silicon dioxide film has been used as the gate dielectric material in MOS device technology for decades. The film is normally grown in a diffusion furnace using a dry thermal oxidation process. As the device is scaled down to nanometer dimensions, the SiO₂ film uniformity requirement is more stringent than ever. In this paper, the effect of furnace temperature and the flow rate of oxygen gas on wafer temperature distribution was investigated. The result was recorded by using the Infrared Thermometer with Dual Laser Targeting device (IRT5000). We have found that the uniformity of temperature distribution on the wafer is almost directly proportional to the O₂ flow rate for the entire furnace temperature range (900 - 1050°C). On the other hand, the effect of O₂ flow rate on wafer temperature distributions clearly shows two distinct regions; for furnace temperatures of less than 1000 °C, the higher the O₂ flow rate, the better the uniformity. For the furnace temperatures of more than 1000 °C, we did not observe any clear dependency of wafer temperature distribution on O₂ flow rate.

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Periodical:

Advanced Materials Research (Volume 1109)

Pages:

6-10

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.1109.6

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Online since:

June 2015

Authors:

A.H. Azman*, S. Norhafizah, Mat Ayub Ramzan, Mohd Khairuddin Md Arshad, M.F.M. Fathil, M.Z. Kamarudin, M. Nurfaiz, M.A. Farehanim, U. Hashim, M.N. Md Nuzaihan, M. Wesam Al-Mufti

Keywords:

Dry Thermal Oxidation, Oxidation Furnace, Ultra-Thin Oxide, Uniformity

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