Simulation of Dirac Electron Tunneling Current in Armchair Graphene Nanoribbon Tunnel Field-Effect Transistors Using a Transfer Matrix Method

Abstract:

We simulate quantum mechanical tunneling current in armchair graphene nanoribbon tunnel field-effect transistors (AGNR-TFETs). The relativistic Dirac equation is used to determine electron wave functions in the AGNRs, while the potential profile is solved by the Poisson equation. We use a transfer matrix method (TMM) to calculate the electron transmittance and the Dirac electron tunneling current in the AGNR-TFETs. The results show that the Dirac electron tunneling current increases with increasing the drain and gate voltages. Moreover, the AGNR width and the thickness of insulator affect the characteristics of the Dirac electron tunneling currents.

• Periodical: Advanced Materials Research (Volume 1112)
• Pages: 128-132
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.1112.128
• Online since: July 2015
• Authors: Endi Suhendi, Rifky Syariati, Fatimah A. Noor, Neny Kurniasih, Khairurrijal Khairurrijal*
• Keywords: Armchair Graphene Nanoribbon, Dirac Tunneling Current, Transfer Matrix Method, Tunneling Field-Effect Transistor

References

[1] K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, Y. Zhang, S. V. Dubonos, I. V. Grigorieva, and A. A. Firsov, Electric field effect in atomically thin carbon films, Science 306 (2004) 666-669.

DOI: 10.1126/science.1102896

[2] M. I. Katsnelson, K. S. Novoselov, A. K. Geim, Chiral Tunnelling and the Klein Paradox in Graphene, Nature Phys. 2 (2006) 620-625.

DOI: 10.1038/nphys384

[3] L. Brey and H. A. Fertig, Electronic states of grapheme nanoribbons, Phys. Rev. B 73 (2006) 235411-1/5.

[4] Y. W. Son, M. L. Cohen, and S. G. Loui, Energy Gaps in Graphene Nanoribbons, Phys. Rev. Lett. 97 (2006) 216803-1/4.

DOI: 10.1103/physrevlett.98.089901

[5] B. Huang, Q. Yan, Z. Li and W. Duan, Towards graphene nanoribbon-based electronics. Front. Phys. China 4 (2009) 269-279.

DOI: 10.1007/s11467-009-0029-3

[6] Q. Zhang, T. Fang, H. Xing, A. Seabaugh and D. Jena, Graphene nanoribbon tunnel transistors, IEEE Electron Device Lett. 29 (2008) 1344-1346.

DOI: 10.1109/led.2008.2005650

[7] C. S .P. Bimo, F. A. Noor, M. Abdullah, Khairrurijal, A Theoretical Model of Band-to-Band Tunneling Current in an Armchair Graphene Nanoribbon Tunnel Field-Effect Transistor, Adv. Mater. Res. 896 (2014) 371-374.

DOI: 10.4028/www.scientific.net/amr.896.371

[8] P. Zhao, J. Chauhan, J. Guo, Computational Study of Tunneling Transistor Based on Graphene Nanoribbon, Nano Lett. 9 (2009) 684-688.

DOI: 10.1021/nl803176x

[9] F. Liu, X. Liu, J. Kang and Y. Wang, http: /www. arxiv. org (2013) 13123391-1/3.

[10] W. Z. Shangguan, X. Zhou, S.B. Chiah, G. H. See, K. Chandrasekaran, Compact gate-current model based on transfer-matrix, J. Appl. Phys. 97 (2005) 123709-1/4.

DOI: 10.1063/1.1929885

[11] B. Huang, Q. Yan, G. Zhou, J. Wu, F. Liu, B. L. Gu, W. Duan, Making a field effect transistor on a single graphene nanoribbon by selective doping, Appl. Phys. Lett. 91 (2007) 253122-1/4.

DOI: 10.1063/1.2826547

[12] J. Knoch and J. Appenzeller, Tunneling phenomena in carbon nanotube field-effect transistors, Phys. Status Solidi A 205 (2008) 679–694.

DOI: 10.1002/pssa.200723528

[13] E. Suhendi, R. Syariati, F. A Noor, N. Kurniasih, Khairurrijal, Simulation of Dirac Tunneling Current of an Armchair Graphene Nanoribbon-Based PN Junction Using a Transfer Matrix Method, Adv. Mater. Res. 974 (2014) 205-209.

DOI: 10.4028/www.scientific.net/amr.974.205

[14] D. K. Ferry, S.M. Goodnick, J. Bird, Transport in Nanostructures, Second Ed., Cambridge University Press, Cambridge, (2009).