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Electron Tunneling Current in an n-p-n Bipolar Transistor Based on Armchair Graphene Nanoribbon by Using Airy-Wavefunction Approach

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Abstract:

We have developed a model of the tunneling current in n-p-n bipolar transistor based on armchair graphene nanoribbon (AGNR). Airy-wavefunction approach is employed to obtain electron transmittance, and the obtained transmittance is then used to obtain the tunneling current. The tunneling current is calculated for various variables such as base-emitter voltage, base-current voltage, and AGNR width. It is found that the tunneling current increases with increasing the base-emitter voltage or the base-collector voltage. This result is due to the lowered barrier height of the base region caused by the increase in the base-emitter voltage or the base-collector voltage. In addition, the tunneling current density increases with the width for narrow AGNR and, on the other hand, it decreases for wide AGNR. This finding might be due to the contributions of the band gap energy and the electron effective mass of AGNR which are inversely proportional to the AGNR width.

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Periodical:

Advanced Materials Research (Volume 1112)

Pages:

80-84

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.1112.80

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Online since:

July 2015

Authors:

Fatimah A. Noor*, Rifky Syariati, Endi Suhendi, Mikrajuddin Abdullah, Khairurrijal Khairurrijal

Keywords:

Airy-Wavefunction, Graphene Nanoribbon, n-p-n Junction, Tunneling Current

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© 2015 Trans Tech Publications Ltd. All Rights Reserved

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