Paper Titles
Synthesis of Various ZnO Nanotree Morphologies through PEG-Assisted Co-Precipitation Method
p.66
Thevetia peruviana: A Wild Natural Resource for the Green Synthesis of Gold Nanoparticles
p.71
Synthesis of Antibacterial Nanofibrous Membrane Based on Polyacrylonitrile (PAN)/Chitosan by Electrospinning Technique for Water Purification Application
p.76
Electron Tunneling Current in an n-p-n Bipolar Transistor Based on Armchair Graphene Nanoribbon by Using Airy-Wavefunction Approach
p.80
Electrical Properties of Carbon-Based Thin Film on Al2O3/Si
p.85
Formation of Porous Anodic Alumina from Impure Aluminum Foil in Inorganic Acids
p.89
Covalent Functionalization of Graphene Flakes with Well-Defined Azido-Terminated Poly(ԑ-caprolactone) and Poly(2-oxazoline)
p.94
Graphene-Based Flexible Circuit on Cotton Fabric Using Wax Patterning Method
p.98
Modeling of Electron Tunneling Current in a p-n Junction Based on Strained Armchair Graphene Nanoribbons with Extended Tight Binding and Transfer Matrix Method
p.102

Electrical Properties of Carbon-Based Thin Film on Al2O3/Si

Article Preview

Abstract:

The electrical properties of Metal Insulator Semiconductor (MIS) structure comprise of carbon-based thin film grown on γ-Al2O3/Si have been studied. The carbon based thin film is deposited by using DC unbalanced magnetron sputtering using Fe doped carbon pellet as a target. Electrical properties of this structure have been analyzed through I-V characteristics measurements using cross-sectional electrode configurations. In-plane I-V measurement confirms the electrical conductivity of carbon layer is higher than Al2O3. The role of carbon thin film has been investigated by comparing the I-V characteristic of MIS structure with and without carbon thin film. Carbon layer and interface states of carbon/γ-Al2O3 have a significant contribution to enhance the cross-sectional current density. A simple energy band diagram model and theoretical calculation have been developed to further analyze this I-V characteristics data. This study is expected to be an alternative way to support the realization of future carbon-based electronic devices.

You might also be interested in these eBooks
Advanced Materials Research and Production View Preview

Info:

Periodical:

Advanced Materials Research (Volume 1112)

Pages:

85-88

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.1112.85

Citation:

Cite this paper

Online since:

July 2015

Authors:

Heldi Alfiadi, Angga Virdian, Yudi Darma*

Keywords:

Al2O3, Carbon, I-V Characteristic, MIS Structure, Sputtering

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2015 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

* - Corresponding Author

References

[1] P. Avouris, M. Freitag, and V. Perebeinos, Carbon-nanotube photonics and optoelectronics, Nature photonics. 2 (2008) 341-350.

DOI: 10.1038/nphoton.2008.94

Google Scholar

[2] K. S. Novaselov, et al, A roadmap for Graphene, Nature. 490 (2012) 192.

Google Scholar

[3] R. Martel, T. Schmidt, H.R. Shea, T. Hertel, and P. Avouris, Single- and multi-wall carbon nanotube field-effect transistors, Appl. Phys. Lett. 73 (1998) 2447.

DOI: 10.1063/1.122477

Google Scholar

[4] S. Das, A. Shaffique, et al, Electronic transport in two dimensional graphene, Gaithersburg. Maryland 20899-6202. USA. Nov 9, (2010).

Google Scholar

[5] T. Ando, Screening Effect and Impurity Scattering in Monolayer Graphene, J. Phys. Soc. Jpn. 75 (2006) 074716-074723.

DOI: 10.1143/jpsj.75.074716

Google Scholar

[6] V. Cheianov, and V. Fal'ko, Friedel oscillations, impurity scattering and temperature dependence of resistivity in graphene, Phys. Rev. Lett. 97 (2006) 226801-226805.

DOI: 10.1103/physrevlett.97.226801

Google Scholar

[7] H. E. Hwang, S. Adam, and S. Das Sarma, Carrier transport in 2D graphene layers, Phys. Rev. Lett. 98 (2007) 186806.

Google Scholar

[8] I. M. Katsnelson, F. Guinea, and A. K. Geim, Scattering of electrons in graphene by clusters of impurities, Phys. Rev. B 79(19) (2009) 195426.

DOI: 10.1103/physrevb.79.195426

Google Scholar

[9] S. Ching-Kuei, C. Yu-Tang, and L. Chu-Hsuan, Influence of oxidation levels of graphene oxide on MIS tunneling diodes, IEEE NMDC, October 7-9, (2013).

Google Scholar

[10] A. S. Aji and Y. Darma, Spectroscopy Analysis of Graphene Like Deposition using DC Unbalanced Magnetron Sputtering on γ-Al2O3 Buffer Layer, The 5th Nanoscience and Nanotechnology Symposium (NNS2013) Surabaya, Indonesia, 23-25 October 2013, AIP conference proceeding 1586, pp.198-2001, 24 Feb (2014).

DOI: 10.1063/1.4866758

Google Scholar

[11] S.M. Sze, Semiconductor devices: physics and technology, Bell telephone laboratories Inc. Canada, (1985).

Google Scholar

[12] H. Alfiadi, A. Virdian, and Y. Darma, Karakterisasi Sifat Listrik Kapasitor MIS dengan Struktur Lapisan Tipis Karbon di Atas Al2O3/Si, To be published Seminar Nasional Material, (2014).

Google Scholar

[13] X. Tan, X. Zhang, C. Wan, X. Gao, H. Lin, and J. Zhang, Enhancing Photovoltaic Characteristics of Iron Doped Amphous Carbon/Al2O3/Si Solar Cell by Al2O3 Interface Passivation, Jpn J Appl Phys 50 (2011) 070204.

DOI: 10.1143/jjap.50.070204

Google Scholar

[14] S. Lina, Z. Yiqi, et al, Analytical Modeling of the Direct Tunneling Current Through High-K Gate Stacks for Long-Channel Cylindrical Surrounding-Gate MOSFETs, J. Semiconduct, 35(3) (2014) 0340091-0340096.

DOI: 10.1088/1674-4926/35/3/034009

Google Scholar