Electrical Properties of Carbon-Based Thin Film on Al2O3/Si

Heldi Alfiadi; Angga Virdian; Yudi Darma

doi:10.4028/www.scientific.net/AMR.1112.85

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 1112Electrical Properties of Carbon-Based Thin Film on...

Electrical Properties of Carbon-Based Thin Film on Al₂O₃/Si

Abstract:

The electrical properties of Metal Insulator Semiconductor (MIS) structure comprise of carbon-based thin film grown on γ-Al₂O₃/Si have been studied. The carbon based thin film is deposited by using DC unbalanced magnetron sputtering using Fe doped carbon pellet as a target. Electrical properties of this structure have been analyzed through I-V characteristics measurements using cross-sectional electrode configurations. In-plane I-V measurement confirms the electrical conductivity of carbon layer is higher than Al₂O₃. The role of carbon thin film has been investigated by comparing the I-V characteristic of MIS structure with and without carbon thin film. Carbon layer and interface states of carbon/γ-Al₂O₃have a significant contribution to enhance the cross-sectional current density. A simple energy band diagram model and theoretical calculation have been developed to further analyze this I-V characteristics data. This study is expected to be an alternative way to support the realization of future carbon-based electronic devices.

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Advanced Materials Research (Volume 1112)

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85-88

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https://doi.org/10.4028/www.scientific.net/AMR.1112.85

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Online since:

July 2015

Authors:

Heldi Alfiadi, Angga Virdian, Yudi Darma*

Keywords:

Al₂O₃, Carbon, I-V Characteristic, MIS Structure, Sputtering

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