Modeling of Electron Tunneling Current in a p-n Junction Based on Strained Armchair Graphene Nanoribbons with Extended Tight Binding and Transfer Matrix Method

Rifky Syariati; Endi Suhendi; Fatimah A. Noor; Khairurrijal Khairurrijal

doi:10.4028/www.scientific.net/AMR.1112.102

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 1112Modeling of Electron Tunneling Current in a p-n...

Modeling of Electron Tunneling Current in a p-n Junction Based on Strained Armchair Graphene Nanoribbons with Extended Tight Binding and Transfer Matrix Method

Abstract:

A theoretical model of electron tunneling current in a p-n junction based on strained armchair graphenenanoribbons (AGNRs) is developed. The effects of strain to the energy dispersion relation and the band gap of AGNR are formulated under the extended tight binding method. The electron transmittance was derived by utilizing the transfer matrix method. The calculated transmittance was then used to obtain the tunneling current by employing the Landauer formula with Gauss Quadrature computation method. The effects of strain to the energy band gap, AGNR width, and tunneling current are studied thoroughly.

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Advanced Materials Research (Volume 1112)

Pages:

102-105

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.1112.102

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Online since:

July 2015

Authors:

Rifky Syariati, Endi Suhendi, Fatimah A. Noor, Khairurrijal Khairurrijal*

Keywords:

AGNR, Bandgap, Extended Tight Binding, Strain, Transfer Matrix

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