Sol-Gel Synthesis of Functional Nanostructured Materials for Electronic Devices

Alexander Rogachev; Dumitru Luca; Vladimir Gaishun; Alina Semchenko; Vitaly Sidsky; Olga Tyulenkova; Dmitry Kovalenko

doi:10.4028/www.scientific.net/AMR.1117.164

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 1117Sol-Gel Synthesis of Functional Nanostructured...

Sol-Gel Synthesis of Functional Nanostructured Materials for Electronic Devices

Abstract:

The possibility of functional nanostructured materials for electronic devices synthesis by sol-gel method have been discussed such as ferroelectrics (SrBi₂(Ta_xNb_1-x)₂O₉) , ferromagnetics (Fe_xCo_yO_z) and semiconductors (ZnO). The structural features of the surface (AFM), crystallization behavior (XRD) during the heating and properties of synthesized films are discussed. Achieved parameters suggest the possibility of using synthesized SBTN sol-gel films in non-volatile memory devices, semiconductors active ZnO layers in solar sells, ferromagnetics Fe_xCo_yO_z films in radioabsorbing covers.

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Periodical:

Advanced Materials Research (Volume 1117)

Pages:

164-167

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.1117.164

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Online since:

July 2015

Authors:

Alexander Rogachev*, Dumitru Luca, Vladimir Gaishun, Alina Semchenko, Vitaly Sidsky, Olga Tyulenkova, Dmitry Kovalenko

Keywords:

Ferromagnetics, Fe_xCo_yO_zFilms, Non-Volatile Memory Devices, Perovskite Structure, SBTN Films, Semiconductors, Sol-Gel Method, ZnO Films

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References

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