The Fabrication of TiN Thin Film and its Inhibition of Secondary Electron Emission Properties

Abstract:

To enhance the efficiency of the Multistage depressed collector (MDC) of traveling wave tube amplifiers (TWTs), TiN film was deposited by arc ion plating. The thickness and roughness of the film were respectively measured by scanning electron microscopy (SEM) and atomic force microscopy (AFM). In order to study the effects of the preparation parameters and the process methods of substrates, the orthogonal experimental design method was applied to find out experimental optimum parameters. The analysis of experimental results showed that the film thickness decreased as the bias voltage increased within a certain range. The root mean square (rms) of roughness R_q was the minimum value for TiN film, when the bias voltage was 150V, the maximum value of the secondary electron emission yield (SEEY) reduced from 1.5 to 1.25 at the optimum parameters.

• Periodical: Advanced Materials Research (Volume 1118)
• Pages: 217-223
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.1118.217
• Online since: July 2015
• Authors: Feng Zhen Song, Xiao Ping Huang*, Ming Xi Qi, Kai Chen, You Liang Liu, Xiang Wang, Tian Yu Yan, Wei Kang Li, Jia Mei Wang, Qing Zhao
• Keywords: Orthogonal Experimentation, Secondary Electron Emission Yield (SEEY), TiN Film

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