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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 1119Hybrid Hetero p-n Junction between ZnO...

Hybrid Hetero p-n Junction between ZnO Microspheres and p-Type Materials

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Abstract:

We report a hybrid hetero p-n junction between Zinc Oxide (ZnO) microspheres and p-GaN thin film or poly (3,4-ethylenedioxythiophene):poly (styrenesulfonate) (PEDOT:PSS). ZnO microspheres, which have high crystalline quality, were synthesized by ablating a ZnO sintered target with focused pulsed laser at high fluence. Recent investigation has demonstrated that ZnO microspheres had high optical property and laser actions in the WGM (whispering gallery mode) from the microshperes under pulsed laser irradiation. In this study, we fabricated a hybrid hetero p-n junction between ZnO microspheres and p-GaN or PEDOT:PSS, and both p-n junctions with p-GaN or PEDOT:PSS had a good rectifying characteristic. In the case of p-GaN, electroluminescence was observed under forward bias.

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Periodical:

Advanced Materials Research (Volume 1119)

Pages:

184-188

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.1119.184

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Online since:

July 2015

Authors:

Tatsuya Ikebuchi*, Norihiro Tetsuyama, Mitsuhiro Higashihata, Hiroshi Ikenoue, Daisuke Nakamura, Tatsuo Okada

Keywords:

Electroluminescence, Hybrid Hetero P-N Junction, Laser Ablation, Lasing, P- GaN, PEDOT:PSS, Spherical Semiconductor Crystal, Zinc Oxide

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© 2015 Trans Tech Publications Ltd. All Rights Reserved

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