Resistive Switching Properties of Zr, Ti, and Zn Metal Oxides

Chun Hung Lai; Wen Shiush Chen; Cheng Hsing Hsu; Yi Mu Lee; Jenn Sen Lin; Tze Ming Chen

doi:10.4028/www.scientific.net/AMR.1119.194

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 1119Resistive Switching Properties of Zr, Ti, and Zn...

Resistive Switching Properties of Zr, Ti, and Zn Metal Oxides

Abstract:

Sputtered metal oxides of Zr, Ti, and Zn were investigated on their resistive switching properties. All these three oxides exhibit electrode independence of the on-state currents, implying presence of non-uniform distribution of the conduction paths. The formation and rupture of those low-resistance filaments determine the reversible stable conductions and transition thresholds, which is related to the oxygen vacancy. The change in filament size explains the effect of current compliance and sweeping bias under various deposition temperatures and ambient. The decrease or increase of conduction currents is ascribed to the varying length and cross-section area of the filaments.

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Periodical:

Advanced Materials Research (Volume 1119)

Pages:

194-197

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.1119.194

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Online since:

July 2015

Authors:

Chun Hung Lai, Wen Shiush Chen*, Cheng Hsing Hsu, Yi Mu Lee, Jenn Sen Lin, Tze Ming Chen

Keywords:

Current Compliance, Resistive Switching, Top Electrode

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* - Corresponding Author

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