Crater Structure and Photoluminescence of Porous Silicon

Abstract:

Porous silicon (p-Si) was fabricated by single-groove electrochemical anodic etching method; the influence of large etching current density on the surface morphology was observed. And the surface microstructure and photoluminescence (PL) of p-Si were shown by scanning electron microscope (SEM) and PL spectra, respectively. The SEM image showed that a new microstructure was formed at the large current density etching area, which resembled a crater structure; and the area away from the crater appeared the porous structure. The comparison results of the PL spectra for the different areas indicated that PL of the crater area has a shorter wavelength.

• Periodical: Advanced Materials Research (Volumes 1120-1121)
• Pages: 179-182
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.1120-1121.179
• Online since: July 2015
• Authors: Qing Li Chang, Yan Liu Yan, Wan Kun
• Keywords: Crater Structure, Electrochemical Anodic Etching, Large Etching Current Density, Photoluminescence (PL), Porous Silicon

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