Phase-Field Simulation for Effect of Annealing Temperature on Oxygen Clusters’ Evolution in Silicon Wafer

Abstract:

In order to investigate the effect of annealing temperature on oxygen clusters’ evolution in silicon wafer during low temperature annealing, a phase-field model and it’s algorithm were established, and the changes of the oxygen clusters’ structure, amount (concentration) and sizes were simulated at different annealing temperature. The results show that when the temperature varies from 923 to 1023K, the oxygen clusters with reasonable amount and average size can be gained; when the temperature is too higher or lower, the suitable oxygen clusters cannot be found; it is verified that the established model and its algorithm have credible thermodynamics and experimental basis.

• Periodical: Advanced Materials Research (Volumes 1120-1121)
• Pages: 473-477
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.1120-1121.473
• Online since: July 2015
• Authors: Ji Xiang*, Xiao Jun Guan, Jin Wang
• Keywords: Annealing Temperature, Oxygen Clusters, Phase Field Simulation, Silicon Wafer

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