Type-II GaSb/GaAs Nanostructures Grown by Droplet Epitaxy with Various Ga Amounts

Maetee Kunrugsa; Somsak Panyakeow; Somchai Ratanathammaphan

doi:10.4028/www.scientific.net/AMR.1131.60

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 1131Type-II GaSb/GaAs Nanostructures Grown by Droplet...

Type-II GaSb/GaAs Nanostructures Grown by Droplet Epitaxy with Various Ga Amounts

Abstract:

We study the GaSb/GaAs nanostructures (NSs) grown by droplet epitaxy technique with various Ga amounts. Ga amount deposited on the GaAs (001) substrate was varied between 3-5 ML to form the different size and density of liquid Ga droplets. The Sb flux was subsequently irradiated to crystallize the droplets. Morphology of GaSb NSs was investigated by atomic force microscopy (AFM). Quantum rings were obtained after crystallizing 3-ML Ga droplets, whereas some kind of quantum dots were formed after crystallizing 4-and 5-ML Ga droplets. The formation mechanisms leading to the different structure are discussed. The photoluminescence (PL) measurement was performed to examine the optical properties of GaSb/GaAs NSs.

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Periodical:

Advanced Materials Research (Volume 1131)

Pages:

60-63

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.1131.60

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Online since:

December 2015

Authors:

Maetee Kunrugsa*, Somsak Panyakeow, Somchai Ratanathammaphan

Keywords:

Droplet Epitaxy, GaSb, Molecular Beam Epitaxy, Nanostructures, Photoluminescence (PL)

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