Study on Mechanical Properties of Single-Crystal Silicon Carbide by Nanoindentation

Abstract:

In order to clarify the mechanical properties of single-crystal silicon carbide (SiC), nanoindentation was performed on a 4H-SiC wafer. The change of hardness with the angle between the wafer orientation flat and the indenter edge, the maximum load and the loading rate were investigated. The hardness reached maximum at an indentation load of 12 mN in the range of 3-50 mN. Hardness decreased under two conditions: when the edge of the indenter tip is parallel to the [11-20] direction, and when a very low loading rate was used. Transmission electron microscopy was used to observe dislocations and cracks under the indents. It was demonstrated that the deformation process of SiC involved three steps with respect to the increase of the indentation load. These results provide information for improving ductile machining process of single crystal SiC.

• Periodical: Advanced Materials Research (Volume 1136)
• Pages: 549-554
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.1136.549
• Online since: January 2016
• Authors: Mitsuhiro Matsumoto, Hirofumi Harada, Koichi Kakimoto, Ji Wang Yan*
• Keywords: Crystal Orientation, Dislocation, Hardness, Mechanical Property, Nanoindentation, Phase Transformation, Silicon Carbide, Single-Crystal SiC

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