Preparation of SiC/SiO2 Core-Shell Coaxial Nanostructure

Abstract:

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A simple direct synthesis method was used to synthesis SiC/SiO2 core–shell coaxial nanocables by thermal evaporation of the mixture powders of silicon monoxide and active carbon at 1300°C and condensation on Si substrate without assistance of any catalyst. The SiC core typically has diameters of 10-40 nm and is covered by a uniform layer of 2-10nm thick amorphous SiO2. A double vapor–solid growth process is proposed for the formation of this novel structures based on detailed structural characterizations. The cable nanostructures may find applications as building blocks in nanomechanical or nanoelectronic devices.

Info:

Periodical:

Advanced Materials Research (Volumes 123-125)

Edited by:

Joong Hee Lee

Pages:

755-758

DOI:

10.4028/www.scientific.net/AMR.123-125.755

Citation:

Y. L. Wang et al., "Preparation of SiC/SiO2 Core-Shell Coaxial Nanostructure", Advanced Materials Research, Vols. 123-125, pp. 755-758, 2010

Online since:

August 2010

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Price:

$35.00

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